Molecular dynamics simulation of heat transport in silicon nano-structures covered with oxide films

Tomofumi Zushi; Yoshinari Kamakura; Kenji Taniguchi; Iwao Ohdomari; Takanobu Watanabe

doi:10.1143/JJAP.49.04DN08

Molecular dynamics simulation of heat transport in silicon nano-structures covered with oxide films

Tomofumi Zushi^*, Yoshinari Kamakura, Kenji Taniguchi, Iwao Ohdomari, Takanobu Watanabe

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We perform a series of molecular dynamics (MD) simulations to investigate the heat transport in Si nano-structures, while explicitly including oxide cover layers in the simulation system for the first time. The dependences of thermal diffusion velocity on the thicknesses of the SiO₂ film and Si lattice are investigated. The results show that thermal diffusion velocity decreases with Si lattice thickness and does not depend on SiO₂ film thickness.

Original language	English
Article number	04DN08
Journal	Japanese journal of applied physics
Volume	49
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.04DN08
Publication status	Published - 2010 Apr

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.49.04DN08

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title = "Molecular dynamics simulation of heat transport in silicon nano-structures covered with oxide films",

abstract = "We perform a series of molecular dynamics (MD) simulations to investigate the heat transport in Si nano-structures, while explicitly including oxide cover layers in the simulation system for the first time. The dependences of thermal diffusion velocity on the thicknesses of the SiO2 film and Si lattice are investigated. The results show that thermal diffusion velocity decreases with Si lattice thickness and does not depend on SiO2 film thickness.",

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AU - Zushi, Tomofumi

AU - Kamakura, Yoshinari

AU - Taniguchi, Kenji

AU - Ohdomari, Iwao

AU - Watanabe, Takanobu

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AB - We perform a series of molecular dynamics (MD) simulations to investigate the heat transport in Si nano-structures, while explicitly including oxide cover layers in the simulation system for the first time. The dependences of thermal diffusion velocity on the thicknesses of the SiO2 film and Si lattice are investigated. The results show that thermal diffusion velocity decreases with Si lattice thickness and does not depend on SiO2 film thickness.

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Molecular dynamics simulation of heat transport in silicon nano-structures covered with oxide films

Abstract

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