Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection

Yung Huang Chang, Wenjing Zhang, Yihan Zhu, Yu Han, Jiang Pu, Jan Kai Chang, Wei Ting Hsu, Jing Kai Huang, Chang Lung Hsu, Ming Hui Chiu, Taishi Takenobu, Henan Li, Chih I. Wu, Wen Hao Chang, Andrew Thye Shen Wee, Lain Jong Li*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    489 Citations (Scopus)


    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.

    Original languageEnglish
    Pages (from-to)8582-8590
    Number of pages9
    JournalACS Nano
    Issue number8
    Publication statusPublished - 2014


    • photoresponse
    • transition metal dichalcogenides
    • two-dimensional materials

    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)
    • Physics and Astronomy(all)


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