Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors

Noriyoshi Yamauchi; Yasushi Inaba; Masamichi Okamura

Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors

Noriyoshi Yamauchi^*, Yasushi Inaba, Masamichi Okamura

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

Original language	English
Pages	691-692
Number of pages	2
Publication status	Published - 1992 Dec 1
Externally published	Yes
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

Engineering(all)

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Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors. / Yamauchi, Noriyoshi; Inaba, Yasushi; Okamura, Masamichi.
1992. 691-692 Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn.

Research output: Contribution to conference › Paper › peer-review

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abstract = "To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.",

author = "Noriyoshi Yamauchi and Yasushi Inaba and Masamichi Okamura",

year = "1992",

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note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

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T1 - Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors

AU - Yamauchi, Noriyoshi

AU - Inaba, Yasushi

AU - Okamura, Masamichi

PY - 1992/12/1

Y1 - 1992/12/1

N2 - To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

AB - To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

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M3 - Paper

AN - SCOPUS:0026959158

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T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors

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ASJC Scopus subject areas

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