Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. The microstructure of Al2O3 on (110) C-H diamond was analyzed. Abrupt interface of ALD Al2O3/C-H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed.
- Atomic layer deposition (ALD) AlâOâ
- conduction mechanism
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering