MOSFETs on (110) C-H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Benjian Liu; Te Bi; Yu Fu; Ken Kudara; Shoichiro Imanishi; Kang Liu; Bing Dai; Jiaqi Zhu; Hiroshi Kawarada

doi:10.1109/TED.2022.3147152

MOSFETs on (110) C-H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Benjian Liu, Te Bi, Yu Fu, Ken Kudara, Shoichiro Imanishi, Kang Liu, Bing Dai, Jiaqi Zhu, Hiroshi Kawarada^*

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. The microstructure of Al2O3 on (110) C-H diamond was analyzed. Abrupt interface of ALD Al2O3/C-H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed.

Original language	English
Pages (from-to)	949-955
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	3
DOIs	https://doi.org/10.1109/TED.2022.3147152
Publication status	Published - 2022 Mar 1

Keywords

Atomic layer deposition (ALD) AlâOâ
FET
conduction mechanism
diamond
normally-OFF

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2022.3147152

Cite this

@article{42526017b52045c0922d99d97b87ca4c,

title = "MOSFETs on (110) C-H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization",

abstract = "Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. The microstructure of Al2O3 on (110) C-H diamond was analyzed. Abrupt interface of ALD Al2O3/C-H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed. ",

keywords = "Atomic layer deposition (ALD) Al{\^a}O{\^a}, FET, conduction mechanism, diamond, normally-OFF",

author = "Benjian Liu and Te Bi and Yu Fu and Ken Kudara and Shoichiro Imanishi and Kang Liu and Bing Dai and Jiaqi Zhu and Hiroshi Kawarada",

note = "Funding Information: This work was supported by the China Scholarship Council under Grant 201906120105. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2022",

month = mar,

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doi = "10.1109/TED.2022.3147152",

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T1 - MOSFETs on (110) C-H Diamond

T2 - ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

AU - Liu, Benjian

AU - Bi, Te

AU - Fu, Yu

AU - Kudara, Ken

AU - Imanishi, Shoichiro

AU - Liu, Kang

AU - Dai, Bing

AU - Zhu, Jiaqi

AU - Kawarada, Hiroshi

PY - 2022/3/1

Y1 - 2022/3/1

N2 - Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. The microstructure of Al2O3 on (110) C-H diamond was analyzed. Abrupt interface of ALD Al2O3/C-H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed.

AB - Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. The microstructure of Al2O3 on (110) C-H diamond was analyzed. Abrupt interface of ALD Al2O3/C-H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed.

KW - Atomic layer deposition (ALD) AlâOâ

KW - FET

KW - conduction mechanism

KW - diamond

KW - normally-OFF

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