MOSFETs on polished surfaces of polycrystalline diamond

K. Kitatani, H. Umezawa, K. Tsugawa*, K. Ueyama, T. Ishikura, S. Yamashita, H. Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

Original languageEnglish
Pages (from-to)1831-1833
Number of pages3
JournalDiamond and Related Materials
Issue number10
Publication statusPublished - 1999 Oct


  • Diamond
  • Hydrogen-terminated
  • Polycrystalline

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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