MOSFETs on polished surfaces of polycrystalline diamond

K. Kitatani; H. Umezawa; K. Tsugawa; K. Ueyama; T. Ishikura; S. Yamashita; H. Kawarada

doi:10.1016/S0925-9635(99)00121-1

MOSFETs on polished surfaces of polycrystalline diamond

K. Kitatani, H. Umezawa, K. Tsugawa^*, K. Ueyama, T. Ishikura, S. Yamashita, H. Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

Original language	English
Pages (from-to)	1831-1833
Number of pages	3
Journal	Diamond and Related Materials
Volume	8
Issue number	10
DOIs	https://doi.org/10.1016/S0925-9635(99)00121-1
Publication status	Published - 1999 Oct

Keywords

Diamond
Hydrogen-terminated
MOSFET
Polycrystalline

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0925-9635(99)00121-1

Cite this

@article{be725ee2d9c34e638669cb1007d14c1e,

title = "MOSFETs on polished surfaces of polycrystalline diamond",

abstract = "MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.",

keywords = "Diamond, Hydrogen-terminated, MOSFET, Polycrystalline",

author = "K. Kitatani and H. Umezawa and K. Tsugawa and K. Ueyama and T. Ishikura and S. Yamashita and H. Kawarada",

note = "Funding Information: The authors would like to thank N.Fujimori and S.Shikata of Sumitomo Electric Co. Ltd. for the supply of the high pressure synthetic Ib diamond substrates. This work has been supported in part by the Grant-in-aid for Scientific Research 09555103 from the Ministry of Education, Science and Culture of Japan.",

year = "1999",

month = oct,

doi = "10.1016/S0925-9635(99)00121-1",

language = "English",

volume = "8",

pages = "1831--1833",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "10",

}

TY - JOUR

T1 - MOSFETs on polished surfaces of polycrystalline diamond

AU - Kitatani, K.

AU - Umezawa, H.

AU - Tsugawa, K.

AU - Ueyama, K.

AU - Ishikura, T.

AU - Yamashita, S.

AU - Kawarada, H.

N1 - Funding Information: The authors would like to thank N.Fujimori and S.Shikata of Sumitomo Electric Co. Ltd. for the supply of the high pressure synthetic Ib diamond substrates. This work has been supported in part by the Grant-in-aid for Scientific Research 09555103 from the Ministry of Education, Science and Culture of Japan.

PY - 1999/10

Y1 - 1999/10

N2 - MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

AB - MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

KW - Diamond

KW - Hydrogen-terminated

KW - MOSFET

KW - Polycrystalline

UR - http://www.scopus.com/inward/record.url?scp=0032657947&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032657947&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(99)00121-1

DO - 10.1016/S0925-9635(99)00121-1

M3 - Article

AN - SCOPUS:0032657947

SN - 0925-9635

VL - 8

SP - 1831

EP - 1833

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 10

ER -

MOSFETs on polished surfaces of polycrystalline diamond

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this