MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm

Tomonari Sato; Manabu Mitsuhara; Takaaki Kakitsuka; Yasuhiro Kondo

doi:10.1109/ICIPRM.2007.381203

MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm

Tomonari Sato^*, Manabu Mitsuhara, Takaaki Kakitsuka, Yasuhiro Kondo

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

We achieved an emission wavelength of 2.33 μm in an InAs/InGaAs multiple-quantum-well (MQW) laser grown by metalorganic vapor phase epitaxy. MQWs with flat interfaces and good thermal stability were obtained by decreasing the growth temperature to 500°C. The PL peak wavelengths of the MQWs were controlled from 1.93 to 2.47 μn by changing the thickness of the InAs wells. For a broad-area laser, the threshold current density was 1.52 kA/cm² and the output power was above 12 mW.

Original language	English
Title of host publication	IPRM'07
Subtitle of host publication	IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
Pages	380-383
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2007.381203
Publication status	Published - 2007
Externally published	Yes
Event	IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan Duration: 2007 May 14 → 2007 May 18

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
Country/Territory	Japan
City	Matsue
Period	07/5/14 → 07/5/18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/ICIPRM.2007.381203

Cite this

Sato, T., Mitsuhara, M., Kakitsuka, T., & Kondo, Y. (2007). MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm. In IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings (pp. 380-383). Article 4265960 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2007.381203

MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm. / Sato, Tomonari; Mitsuhara, Manabu; Kakitsuka, Takaaki et al.
IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. 2007. p. 380-383 4265960 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sato, T, Mitsuhara, M, Kakitsuka, T & Kondo, Y 2007, MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm. in IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings., 4265960, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 380-383, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, Matsue, Japan, 07/5/14. https://doi.org/10.1109/ICIPRM.2007.381203

Sato T, Mitsuhara M, Kakitsuka T, Kondo Y. MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm. In IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. 2007. p. 380-383. 4265960. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2007.381203

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abstract = "We achieved an emission wavelength of 2.33 μm in an InAs/InGaAs multiple-quantum-well (MQW) laser grown by metalorganic vapor phase epitaxy. MQWs with flat interfaces and good thermal stability were obtained by decreasing the growth temperature to 500°C. The PL peak wavelengths of the MQWs were controlled from 1.93 to 2.47 μn by changing the thickness of the InAs wells. For a broad-area laser, the threshold current density was 1.52 kA/cm2 and the output power was above 12 mW.",

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AU - Kondo, Yasuhiro

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N2 - We achieved an emission wavelength of 2.33 μm in an InAs/InGaAs multiple-quantum-well (MQW) laser grown by metalorganic vapor phase epitaxy. MQWs with flat interfaces and good thermal stability were obtained by decreasing the growth temperature to 500°C. The PL peak wavelengths of the MQWs were controlled from 1.93 to 2.47 μn by changing the thickness of the InAs wells. For a broad-area laser, the threshold current density was 1.52 kA/cm2 and the output power was above 12 mW.

AB - We achieved an emission wavelength of 2.33 μm in an InAs/InGaAs multiple-quantum-well (MQW) laser grown by metalorganic vapor phase epitaxy. MQWs with flat interfaces and good thermal stability were obtained by decreasing the growth temperature to 500°C. The PL peak wavelengths of the MQWs were controlled from 1.93 to 2.47 μn by changing the thickness of the InAs wells. For a broad-area laser, the threshold current density was 1.52 kA/cm2 and the output power was above 12 mW.

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MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm

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