N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors for high power operation

T. Makimoto*, K. Kumakura, N. Kobayashi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

15 Citations (Scopus)


We have fabricated N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors to evaluate their common-emitter current-voltage (I-V) characteristics at room temperature. The device has a Si-doped N-AlGaN emitter, a Mg-doped p-InGaN base, and a Si-doped n-GaN collector. The common-emitter I-V characteristics were observed up to a collector-emitter voltage of 70 V and a collector current of 14.5 mA. The breakdown voltage is as high as 100 V. The corresponding breakdown electric field is 2 × 106 V/cm, which is comparable to the expected one for GaN. This high breakdown electric field is ascribed to a less damaged p-InGaN and a wide bandgap of an n-GaN collector. Furthermore, the leakage path through the defects in InGaN layers is considered to be eliminated by filling them with wide bandgap AlGaN layers during the emitter growth.

Original languageEnglish
Pages (from-to)95-98
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number1
Publication statusPublished - 2002 Dec 1
Externally publishedYes
Event2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
Duration: 2002 Jul 222002 Jul 25

ASJC Scopus subject areas

  • Condensed Matter Physics


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