Nano-device simulation from an atomistic view

N. Mori, G. Mil'Nikov, H. Minari, Y. Kamakura, T. Zushi, T. Watanabe, M. Uematsu, K. M. Itoh, S. Uno, H. Tsuchiya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)


Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green's function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Publication statusPublished - 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Other2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/TerritoryUnited States
CityWashington, DC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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