Abstract
Nanofabrication on a hydrogen-terminated diamond surface is performed using an atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm are successfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed of one side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).
Original language | English |
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Pages (from-to) | W12.5.1-W12.5.5 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 675 |
DOIs | |
Publication status | Published - 2001 |
Event | Nanotubes, Fullerenes, Nanostructured and Disordered Carbon - San Francisco, CA, United States Duration: 2001 Apr 17 → 2001 Apr 20 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering