Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope

Minoru Tachiki*, Tohru Fukuda, Hokuto Seo, Kenta Sugata, Tokishige Banno, Hitoshi Umezawa, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


Nanofabrication on a hydrogen-terminated diamond surface is performed using an atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm are successfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed of one side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).

Original languageEnglish
Pages (from-to)W12.5.1-W12.5.5
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2001
EventNanotubes, Fullerenes, Nanostructured and Disordered Carbon - San Francisco, CA, United States
Duration: 2001 Apr 172001 Apr 20

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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