Nanoscale characterization of domain structures in Bi4Ti 3O12 single crystals using near-field raman spectroscopy

Claudia Carmignano; Minoru Osada; Yuji Noguchi; Yuuki Kitanaka; Masaru Miyayama

doi:10.1143/JJAP.50.09NE10

Nanoscale characterization of domain structures in Bi₄Ti ₃O₁₂ single crystals using near-field raman spectroscopy

Claudia Carmignano, Minoru Osada^*, Yuji Noguchi, Yuuki Kitanaka, Masaru Miyayama

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated domain structures in Bi₄Ti ₃O₁₂ (BiT) single crystals by Raman scattering using scanning near-field optical microscopy (SNOM). In SNOM-Raman spectra, the polarization dependence reflects domain structures, and the spectra at the domain-wall region exhibit the splitting of the TiO₆ mode at ∼840 cm^-1 with the appearance of additional peaks, the behavior of which is different from that observed in the single-domain region. From the resonant Raman spectra of highly deficient BiT single crystals, we find that the resonance is localized at oxygen vacancies in TiO₆ octahedra, and planer defects, owing to oxygen vacancies, accumulate near the domain walls, causing a strong domain pinning.

Original language	English
Article number	09NE10
Journal	Japanese Journal of Applied Physics
Volume	50
Issue number	9 PART 3
DOIs	https://doi.org/10.1143/JJAP.50.09NE10
Publication status	Published - 2011 Sept

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Nanoscale characterization of domain structures in Bi4Ti 3O12 single crystals using near-field raman spectroscopy",

abstract = "We have investigated domain structures in Bi4Ti 3O12 (BiT) single crystals by Raman scattering using scanning near-field optical microscopy (SNOM). In SNOM-Raman spectra, the polarization dependence reflects domain structures, and the spectra at the domain-wall region exhibit the splitting of the TiO6 mode at ∼840 cm-1 with the appearance of additional peaks, the behavior of which is different from that observed in the single-domain region. From the resonant Raman spectra of highly deficient BiT single crystals, we find that the resonance is localized at oxygen vacancies in TiO6 octahedra, and planer defects, owing to oxygen vacancies, accumulate near the domain walls, causing a strong domain pinning.",

author = "Claudia Carmignano and Minoru Osada and Yuji Noguchi and Yuuki Kitanaka and Masaru Miyayama",

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T1 - Nanoscale characterization of domain structures in Bi4Ti 3O12 single crystals using near-field raman spectroscopy

AU - Carmignano, Claudia

AU - Osada, Minoru

AU - Noguchi, Yuji

AU - Kitanaka, Yuuki

AU - Miyayama, Masaru

PY - 2011/9

Y1 - 2011/9

N2 - We have investigated domain structures in Bi4Ti 3O12 (BiT) single crystals by Raman scattering using scanning near-field optical microscopy (SNOM). In SNOM-Raman spectra, the polarization dependence reflects domain structures, and the spectra at the domain-wall region exhibit the splitting of the TiO6 mode at ∼840 cm-1 with the appearance of additional peaks, the behavior of which is different from that observed in the single-domain region. From the resonant Raman spectra of highly deficient BiT single crystals, we find that the resonance is localized at oxygen vacancies in TiO6 octahedra, and planer defects, owing to oxygen vacancies, accumulate near the domain walls, causing a strong domain pinning.

AB - We have investigated domain structures in Bi4Ti 3O12 (BiT) single crystals by Raman scattering using scanning near-field optical microscopy (SNOM). In SNOM-Raman spectra, the polarization dependence reflects domain structures, and the spectra at the domain-wall region exhibit the splitting of the TiO6 mode at ∼840 cm-1 with the appearance of additional peaks, the behavior of which is different from that observed in the single-domain region. From the resonant Raman spectra of highly deficient BiT single crystals, we find that the resonance is localized at oxygen vacancies in TiO6 octahedra, and planer defects, owing to oxygen vacancies, accumulate near the domain walls, causing a strong domain pinning.

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Nanoscale characterization of domain structures in Bi₄Ti ₃O₁₂ single crystals using near-field raman spectroscopy

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