Abstract
After amorphous-like N-passivated GaAs surfaces with a low defect density are obtained as a mask layer for selective growth, nanometer scale patterning of the surfaces is achieved using ultra-high vacuum scanning tunneling microscopy to selectively depassivate surface N atoms. After patterning, GaAs dots with well-controlled size (typically 6 nm high and 50 x 50 nm2) can be successfully grown using trimethylgallium and tertiarybutylarsine in the specific area where the underlying GaAs layer appeared.
| Original language | English |
|---|---|
| Pages (from-to) | 3821-3826 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 36 |
| Issue number | 6 SUPPL. B |
| DOIs | |
| Publication status | Published - 1997 Jun |
| Externally published | Yes |
Keywords
- GaN
- MOMBE
- Passivation
- Quantum dots
- STM
- Selective growth
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)