Nanosecond excitonic spin relaxation in cubic GaN

Atsushi Tackeuchi; Hirotaka Otake; Yusuke Ogawa; Takafumi Ushiyama; Taisuke Fujita; Fumiyoshi Takano; Hiro Akinaga

doi:10.1063/1.2195779

Nanosecond excitonic spin relaxation in cubic GaN

Atsushi Tackeuchi^*, Hirotaka Otake, Yusuke Ogawa, Takafumi Ushiyama, Taisuke Fujita, Fumiyoshi Takano, Hiro Akinaga

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The excitonic spin relaxation process in cubic GaN is observed by spin-dependent pump and probe reflectance measurements with subpicosecond time resolution. The spin polarization presents at temperatures lower than 100 K. The spin relaxation times at 15-75 K are found to be longer than 5 ns and short spin relaxation times on the picosecond order are not present. Although these long spin relaxation times are in striking contrast to the subpicosecond spin relaxation of A -band free excitons in hexagonal GaN, they are consistent with the dependence that spin relaxation time becomes longer for wider-band gap zinc blende semiconductors.

Original language	English
Article number	162114
Journal	Applied Physics Letters
Volume	88
Issue number	16
DOIs	https://doi.org/10.1063/1.2195779
Publication status	Published - 2006 Apr 17

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Nanosecond excitonic spin relaxation in cubic GaN",

abstract = "The excitonic spin relaxation process in cubic GaN is observed by spin-dependent pump and probe reflectance measurements with subpicosecond time resolution. The spin polarization presents at temperatures lower than 100 K. The spin relaxation times at 15-75 K are found to be longer than 5 ns and short spin relaxation times on the picosecond order are not present. Although these long spin relaxation times are in striking contrast to the subpicosecond spin relaxation of A -band free excitons in hexagonal GaN, they are consistent with the dependence that spin relaxation time becomes longer for wider-band gap zinc blende semiconductors.",

author = "Atsushi Tackeuchi and Hirotaka Otake and Yusuke Ogawa and Takafumi Ushiyama and Taisuke Fujita and Fumiyoshi Takano and Hiro Akinaga",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research on the Priority Area ”Semiconductor Nanospintronics” (No. 14076217 and No. 14076219), from the MEXT, a Grant-in-Aid for The 21st Century COE Program (Physics of Self-Organization Systems) at Waseda University from MEXT and the High-Tech Research Center Project from MEXT. This work was also partly supported by NEDO under the Nanotechnology Program.",

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doi = "10.1063/1.2195779",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

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T1 - Nanosecond excitonic spin relaxation in cubic GaN

AU - Tackeuchi, Atsushi

AU - Otake, Hirotaka

AU - Ogawa, Yusuke

AU - Ushiyama, Takafumi

AU - Fujita, Taisuke

AU - Takano, Fumiyoshi

AU - Akinaga, Hiro

N1 - Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research on the Priority Area ”Semiconductor Nanospintronics” (No. 14076217 and No. 14076219), from the MEXT, a Grant-in-Aid for The 21st Century COE Program (Physics of Self-Organization Systems) at Waseda University from MEXT and the High-Tech Research Center Project from MEXT. This work was also partly supported by NEDO under the Nanotechnology Program.

PY - 2006/4/17

Y1 - 2006/4/17

N2 - The excitonic spin relaxation process in cubic GaN is observed by spin-dependent pump and probe reflectance measurements with subpicosecond time resolution. The spin polarization presents at temperatures lower than 100 K. The spin relaxation times at 15-75 K are found to be longer than 5 ns and short spin relaxation times on the picosecond order are not present. Although these long spin relaxation times are in striking contrast to the subpicosecond spin relaxation of A -band free excitons in hexagonal GaN, they are consistent with the dependence that spin relaxation time becomes longer for wider-band gap zinc blende semiconductors.

AB - The excitonic spin relaxation process in cubic GaN is observed by spin-dependent pump and probe reflectance measurements with subpicosecond time resolution. The spin polarization presents at temperatures lower than 100 K. The spin relaxation times at 15-75 K are found to be longer than 5 ns and short spin relaxation times on the picosecond order are not present. Although these long spin relaxation times are in striking contrast to the subpicosecond spin relaxation of A -band free excitons in hexagonal GaN, they are consistent with the dependence that spin relaxation time becomes longer for wider-band gap zinc blende semiconductors.

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DO - 10.1063/1.2195779

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JF - Applied Physics Letters

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M1 - 162114

ER -

Nanosecond excitonic spin relaxation in cubic GaN

Abstract

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