Nanosecond pump-and-probe study of wurtzite GaN

T. Deguchi; T. Azuhata; T. Sota; S. Chichibu; N. Sarukura; H. Ohtake; T. Yamanaka; S. Nakamura

doi:10.1016/S0921-5107(97)00159-1

Nanosecond pump-and-probe study of wurtzite GaN

T. Deguchi, T. Azuhata, T. Sota^*, S. Chichibu, N. Sarukura, H. Ohtake, T. Yamanaka, S. Nakamura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We present a nanosecond pump-and-probe optical study of wurtzite GaN under the excitation condition that the carrier-longitudinal optical phonon scattering does not contribute to the energy relaxation process. The delay time after which the isothermal condition is achieved is found to be ∼ 50 ns. This comes from both the phonon structure in GaN and the fact that the carrier cooling depends on excess kinetic energies of carriers.

Original language	English
Pages (from-to)	180-182
Number of pages	3
Journal	Materials Science and Engineering B
Volume	50
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(97)00159-1
Publication status	Published - 1997 Dec 18

Keywords

Gallium nitride
Isothermal region
Phonon structure
Pump-and-probe method

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(97)00159-1

Cite this

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title = "Nanosecond pump-and-probe study of wurtzite GaN",

abstract = "We present a nanosecond pump-and-probe optical study of wurtzite GaN under the excitation condition that the carrier-longitudinal optical phonon scattering does not contribute to the energy relaxation process. The delay time after which the isothermal condition is achieved is found to be ∼ 50 ns. This comes from both the phonon structure in GaN and the fact that the carrier cooling depends on excess kinetic energies of carriers.",

keywords = "Gallium nitride, Isothermal region, Phonon structure, Pump-and-probe method",

author = "T. Deguchi and T. Azuhata and T. Sota and S. Chichibu and N. Sarukura and H. Ohtake and T. Yamanaka and S. Nakamura",

note = "Funding Information: The authors are grateful to Professor K. Suzuki and Dr T. Uenoyama for stimulating discussions. Professors H. Nakanishi and H. Ikoma are acknowledged for continuous encouragements. The work at Waseda University was supported in part by Seki Science and Technology Foundation and the Ministry of Education, Science, Sports and Culture of Japan (Grant No. 08874026 and High-Tech Research Center Project).",

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doi = "10.1016/S0921-5107(97)00159-1",

language = "English",

volume = "50",

pages = "180--182",

journal = "Materials Science and Engineering B",

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TY - JOUR

T1 - Nanosecond pump-and-probe study of wurtzite GaN

AU - Deguchi, T.

AU - Azuhata, T.

AU - Sota, T.

AU - Chichibu, S.

AU - Sarukura, N.

AU - Ohtake, H.

AU - Yamanaka, T.

AU - Nakamura, S.

N1 - Funding Information: The authors are grateful to Professor K. Suzuki and Dr T. Uenoyama for stimulating discussions. Professors H. Nakanishi and H. Ikoma are acknowledged for continuous encouragements. The work at Waseda University was supported in part by Seki Science and Technology Foundation and the Ministry of Education, Science, Sports and Culture of Japan (Grant No. 08874026 and High-Tech Research Center Project).

PY - 1997/12/18

Y1 - 1997/12/18

N2 - We present a nanosecond pump-and-probe optical study of wurtzite GaN under the excitation condition that the carrier-longitudinal optical phonon scattering does not contribute to the energy relaxation process. The delay time after which the isothermal condition is achieved is found to be ∼ 50 ns. This comes from both the phonon structure in GaN and the fact that the carrier cooling depends on excess kinetic energies of carriers.

AB - We present a nanosecond pump-and-probe optical study of wurtzite GaN under the excitation condition that the carrier-longitudinal optical phonon scattering does not contribute to the energy relaxation process. The delay time after which the isothermal condition is achieved is found to be ∼ 50 ns. This comes from both the phonon structure in GaN and the fact that the carrier cooling depends on excess kinetic energies of carriers.

KW - Gallium nitride

KW - Isothermal region

KW - Phonon structure

KW - Pump-and-probe method

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DO - 10.1016/S0921-5107(97)00159-1

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SN - 0921-5107

VL - 50

SP - 180

EP - 182

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

Nanosecond pump-and-probe study of wurtzite GaN

Abstract

Keywords

ASJC Scopus subject areas

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