Narrow spectral linewidth silicon photonic wavelength tunable laser diode for digital coherent communication system

Tomohiro Kita; Rui Tang; Hirohito Yamada

doi:10.1109/JSTQE.2016.2559418

Narrow spectral linewidth silicon photonic wavelength tunable laser diode for digital coherent communication system

Tomohiro Kita, Rui Tang, Hirohito Yamada

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.

Original language	English
Article number	7460878
Pages (from-to)	23-34
Number of pages	12
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	22
Issue number	6
DOIs	https://doi.org/10.1109/JSTQE.2016.2559418
Publication status	Published - 2016 Nov 1
Externally published	Yes

Keywords

Silicon photonics
resonator filters
semiconductor laser

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2016.2559418

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@article{587780e233b0413baacb70f799cff79b,

title = "Narrow spectral linewidth silicon photonic wavelength tunable laser diode for digital coherent communication system",

abstract = "We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.",

keywords = "Silicon photonics, resonator filters, semiconductor laser",

author = "Tomohiro Kita and Rui Tang and Hirohito Yamada",

note = "Publisher Copyright: {\textcopyright} 1995-2012 IEEE.",

year = "2016",

month = nov,

day = "1",

doi = "10.1109/JSTQE.2016.2559418",

language = "English",

volume = "22",

pages = "23--34",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Narrow spectral linewidth silicon photonic wavelength tunable laser diode for digital coherent communication system

AU - Kita, Tomohiro

AU - Tang, Rui

AU - Yamada, Hirohito

PY - 2016/11/1

Y1 - 2016/11/1

N2 - We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.

AB - We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.

KW - Silicon photonics

KW - resonator filters

KW - semiconductor laser

UR - http://www.scopus.com/inward/record.url?scp=84980324598&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84980324598&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2016.2559418

DO - 10.1109/JSTQE.2016.2559418

M3 - Article

AN - SCOPUS:84980324598

SN - 1077-260X

VL - 22

SP - 23

EP - 34

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 6

M1 - 7460878

ER -

Narrow spectral linewidth silicon photonic wavelength tunable laser diode for digital coherent communication system

Abstract

Keywords

ASJC Scopus subject areas

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