NEW ON-CHIP VOLTAGE CONVERTER FOR SUBMICRON HIGH-DENSITY DRAMs.

Tohru Furuyama; Yohji Watanabe; Takashi Ohsawa; Shigeyoshi Watanabe

NEW ON-CHIP VOLTAGE CONVERTER FOR SUBMICRON HIGH-DENSITY DRAMs.

Tohru Furuyama^*, Yohji Watanabe, Takashi Ohsawa, Shigeyoshi Watanabe

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

A new on-chip voltage converter has been developed, and its characteristics have been examined. Being implemented in an experimental 4Mb dynamic RAM, this voltage converter has successfully demonstrated to be of importance for high-density, high-speed, and high-reliability DRAMs with submicron transistors.

Original language	English
Pages	10-12
Number of pages	3
Publication status	Published - 1986 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "NEW ON-CHIP VOLTAGE CONVERTER FOR SUBMICRON HIGH-DENSITY DRAMs.",

abstract = "A new on-chip voltage converter has been developed, and its characteristics have been examined. Being implemented in an experimental 4Mb dynamic RAM, this voltage converter has successfully demonstrated to be of importance for high-density, high-speed, and high-reliability DRAMs with submicron transistors.",

author = "Tohru Furuyama and Yohji Watanabe and Takashi Ohsawa and Shigeyoshi Watanabe",

year = "1986",

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T1 - NEW ON-CHIP VOLTAGE CONVERTER FOR SUBMICRON HIGH-DENSITY DRAMs.

AU - Furuyama, Tohru

AU - Watanabe, Yohji

AU - Ohsawa, Takashi

AU - Watanabe, Shigeyoshi

PY - 1986/12/1

Y1 - 1986/12/1

N2 - A new on-chip voltage converter has been developed, and its characteristics have been examined. Being implemented in an experimental 4Mb dynamic RAM, this voltage converter has successfully demonstrated to be of importance for high-density, high-speed, and high-reliability DRAMs with submicron transistors.

AB - A new on-chip voltage converter has been developed, and its characteristics have been examined. Being implemented in an experimental 4Mb dynamic RAM, this voltage converter has successfully demonstrated to be of importance for high-density, high-speed, and high-reliability DRAMs with submicron transistors.

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M3 - Paper

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ER -

NEW ON-CHIP VOLTAGE CONVERTER FOR SUBMICRON HIGH-DENSITY DRAMs.

Abstract

ASJC Scopus subject areas

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