Abstract
A new type heterostructure avalanche photodiode (HAPD) is proposed and successfully fabricated by liquid phase epitaxy and Zn-diffusion. The HAPD has been made from a successively grown wafer which consists of In//0//. //5//3Ga//0//. //4//7As light absorption layer, InGaAsP buffer layers and InP avalanche multiplication layer on n-InP substrate. Dark current density of 1 multiplied by 10** minus **4Acm** minus **2 at 0. 9 V//B is achieved. When illuminating with 1. 15 mu m light, the diode has a maximum multiplication gain of 880 and an external quantum efficiency of 40%. The quantum efficiency is markedly improved than that of previously reported HAPD.
| Original language | English |
|---|---|
| Pages (from-to) | 179-181 |
| Number of pages | 3 |
| Journal | Electron device letters |
| Volume | EDL-2 |
| Issue number | 7 |
| Publication status | Published - 1981 Jul |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)