Ni Impurity Effect on the Transport Properties and Carrier Concentration of Bi2212

Yuta Kiguchi; Takuya Nakazawa; Azusa Matsuda

doi:10.1016/j.phpro.2014.09.014

Ni Impurity Effect on the Transport Properties and Carrier Concentration of Bi2212

Yuta Kiguchi^*, Takuya Nakazawa, Azusa Matsuda

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

In typical hole-doped high-Tc cuprates, the optimum doping is achieved at the doping level p ∼ 0.16 (= p_opt). However impurity dopings sometimes alters p_opt value. In this sense, p_opt ∼ 0.16 is thought not to be universal. Here, we studied the doping dependence of T_c and some transport characteristics for several Ni impurity doped Bi₂Sr₂CaCu₂O_8+δ single crystals. Doping levels were precisely determined by thermoelectric measurements and oxygen contents δ. We found that 1. Ni valence is almost same as Cu, 2. p_opt shifts toward higher doping, 3. pseudogap opening temperature T^∗ is not affected by Ni impurity. The results are consistent with the model that the shift in p_opt is due to the doping dependent pair breaking effect. This means that the shift is superficial and the essential universality p_opt ∼ 0.16 is impurity doped regime.

Original language	English
Pages (from-to)	54-57
Number of pages	4
Journal	Physics Procedia
Volume	58
DOIs	https://doi.org/10.1016/j.phpro.2014.09.014
Publication status	Published - 2014
Event	26th International Symposium on Superconductivity, ISS 2013 - Tokyo, Japan Duration: 2013 Nov 18 → 2013 Nov 20

Keywords

Bi2212
Cuprate superdonductor
Impurity effect
Resistivity
Thermoelectric power

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1016/j.phpro.2014.09.014

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@article{e09ba4deb7a94a76a80d805d7ffd0f46,

title = "Ni Impurity Effect on the Transport Properties and Carrier Concentration of Bi2212",

abstract = "In typical hole-doped high-Tc cuprates, the optimum doping is achieved at the doping level p ∼ 0.16 (= popt). However impurity dopings sometimes alters popt value. In this sense, popt ∼ 0.16 is thought not to be universal. Here, we studied the doping dependence of Tc and some transport characteristics for several Ni impurity doped Bi2Sr2CaCu2O8+δ single crystals. Doping levels were precisely determined by thermoelectric measurements and oxygen contents δ. We found that 1. Ni valence is almost same as Cu, 2. popt shifts toward higher doping, 3. pseudogap opening temperature T∗ is not affected by Ni impurity. The results are consistent with the model that the shift in popt is due to the doping dependent pair breaking effect. This means that the shift is superficial and the essential universality popt ∼ 0.16 is impurity doped regime.",

keywords = "Bi2212, Cuprate superdonductor, Impurity effect, Resistivity, Thermoelectric power",

author = "Yuta Kiguchi and Takuya Nakazawa and Azusa Matsuda",

note = "Publisher Copyright: {\textcopyright} 2014 The Authors.; 26th International Symposium on Superconductivity, ISS 2013 ; Conference date: 18-11-2013 Through 20-11-2013",

year = "2014",

doi = "10.1016/j.phpro.2014.09.014",

language = "English",

volume = "58",

pages = "54--57",

journal = "Physics Procedia",

issn = "1875-3884",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Ni Impurity Effect on the Transport Properties and Carrier Concentration of Bi2212

AU - Kiguchi, Yuta

AU - Nakazawa, Takuya

AU - Matsuda, Azusa

PY - 2014

Y1 - 2014

N2 - In typical hole-doped high-Tc cuprates, the optimum doping is achieved at the doping level p ∼ 0.16 (= popt). However impurity dopings sometimes alters popt value. In this sense, popt ∼ 0.16 is thought not to be universal. Here, we studied the doping dependence of Tc and some transport characteristics for several Ni impurity doped Bi2Sr2CaCu2O8+δ single crystals. Doping levels were precisely determined by thermoelectric measurements and oxygen contents δ. We found that 1. Ni valence is almost same as Cu, 2. popt shifts toward higher doping, 3. pseudogap opening temperature T∗ is not affected by Ni impurity. The results are consistent with the model that the shift in popt is due to the doping dependent pair breaking effect. This means that the shift is superficial and the essential universality popt ∼ 0.16 is impurity doped regime.

AB - In typical hole-doped high-Tc cuprates, the optimum doping is achieved at the doping level p ∼ 0.16 (= popt). However impurity dopings sometimes alters popt value. In this sense, popt ∼ 0.16 is thought not to be universal. Here, we studied the doping dependence of Tc and some transport characteristics for several Ni impurity doped Bi2Sr2CaCu2O8+δ single crystals. Doping levels were precisely determined by thermoelectric measurements and oxygen contents δ. We found that 1. Ni valence is almost same as Cu, 2. popt shifts toward higher doping, 3. pseudogap opening temperature T∗ is not affected by Ni impurity. The results are consistent with the model that the shift in popt is due to the doping dependent pair breaking effect. This means that the shift is superficial and the essential universality popt ∼ 0.16 is impurity doped regime.

KW - Bi2212

KW - Cuprate superdonductor

KW - Impurity effect

KW - Resistivity

KW - Thermoelectric power

UR - http://www.scopus.com/inward/record.url?scp=85028011153&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028011153&partnerID=8YFLogxK

U2 - 10.1016/j.phpro.2014.09.014

DO - 10.1016/j.phpro.2014.09.014

M3 - Conference article

AN - SCOPUS:85028011153

SN - 1875-3884

VL - 58

SP - 54

EP - 57

JO - Physics Procedia

JF - Physics Procedia

T2 - 26th International Symposium on Superconductivity, ISS 2013

Y2 - 18 November 2013 through 20 November 2013

ER -

Ni Impurity Effect on the Transport Properties and Carrier Concentration of Bi2212

Abstract

Keywords

ASJC Scopus subject areas

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