TY - JOUR
T1 - Nickel deposition behavior on n-type silicon wafer for fabrication of minute nickel dots
AU - Takano, Nao
AU - Niwa, Daisuke
AU - Yamada, Taro
AU - Osaka, Tetsuya
N1 - Funding Information:
The authors would like to thank to Dr Ueno and Dr Kasai, NEC Corporation, for supplying the SiO 2 pre-patterned Si wafer. This work was financially supported by the Research for the Future Project ‘Wafer-Scale Formation Process of Nano Dots’, the Japan Society for the Promotion of Science, and by a Grant-in-Aid for Scientific Research on Priority Area of Electrochemistry of Ordered Interfaces from the ministry of Education, Science, Sports and Culture, Japan.
PY - 2000/6/23
Y1 - 2000/6/23
N2 - The present study is a part of our systematic development of mass-scale production processes of nanometer-scale arrays of metal dots on silicon wafer surfaces. Metallic Ni was deposited onto Si(100) wafer surfaces electrolessly or galvanostatically, for surveying appropriate methods for formation of minute structures. Within an electroless bath of simple NiSO4-(NH4)2SO4 solution, metallic Ni was deposited, accompanied by the oxidation of the Si surface. Wet pretreatment of the Si surfaces in HPM (HCl and H2O2 mixture) or in ethanol drastically improved the uniformity of Ni layer and the rate of deposition. The electrolytic deposition with applying a potential at the Si wafer resulted in formation of Ni deposit which were easily peeled off. Based on the knowledge obtained, a two-dimensional array of minute Ni dots (diameter ca. 270 nm) was successfully fabricated.
AB - The present study is a part of our systematic development of mass-scale production processes of nanometer-scale arrays of metal dots on silicon wafer surfaces. Metallic Ni was deposited onto Si(100) wafer surfaces electrolessly or galvanostatically, for surveying appropriate methods for formation of minute structures. Within an electroless bath of simple NiSO4-(NH4)2SO4 solution, metallic Ni was deposited, accompanied by the oxidation of the Si surface. Wet pretreatment of the Si surfaces in HPM (HCl and H2O2 mixture) or in ethanol drastically improved the uniformity of Ni layer and the rate of deposition. The electrolytic deposition with applying a potential at the Si wafer resulted in formation of Ni deposit which were easily peeled off. Based on the knowledge obtained, a two-dimensional array of minute Ni dots (diameter ca. 270 nm) was successfully fabricated.
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U2 - 10.1016/S0013-4686(00)00442-4
DO - 10.1016/S0013-4686(00)00442-4
M3 - Conference article
AN - SCOPUS:0034205088
SN - 0013-4686
VL - 45
SP - 3263
EP - 3268
JO - Electrochimica Acta
JF - Electrochimica Acta
IS - 20
T2 - 50st ISE Meeting: Electrochemical Materials Science
Y2 - 5 September 1999 through 10 September 1999
ER -