Nitrogen doping into GaAs1-xPx using ionized beam in molecular beam epitaxy

Yuichi Matsushima; Shun ichi Gonda; Yunosuke Makita; Seiji Mukai

doi:10.1016/0022-0248(78)90384-6

Nitrogen doping into GaAs_1-xP_x using ionized beam in molecular beam epitaxy

Yuichi Matsushima^*, Shun ichi Gonda, Yunosuke Makita, Seiji Mukai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A new method of nitrogen doping into GaAs_1-xP_x was attempted using the ionized beam in molecular beam epitaxy (MBE). With the ionization system attached to MBE system, the ionized nitrogen beam was supplied onto the substrate during MBE. Nitrogen doping of more than 10¹⁸ cm^-3 was successfully made without disturbing the high crystallographic quality of the epitaxial layer. Photoluminescence measurements show that the nitrogen atoms introduced into the epitaxial layer act as isoelectronic luminescence centers. The effective sticking coefficient of ionized nitrogen for GaAs_1-xP_x at 580°C is estimated as the order of 0.01.

Original language	English
Pages (from-to)	281-286
Number of pages	6
Journal	Journal of Crystal Growth
Volume	43
Issue number	3
DOIs	https://doi.org/10.1016/0022-0248(78)90384-6
Publication status	Published - 1978
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1016/0022-0248(78)90384-6

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title = "Nitrogen doping into GaAs1-xPx using ionized beam in molecular beam epitaxy",

abstract = "A new method of nitrogen doping into GaAs1-xPx was attempted using the ionized beam in molecular beam epitaxy (MBE). With the ionization system attached to MBE system, the ionized nitrogen beam was supplied onto the substrate during MBE. Nitrogen doping of more than 1018 cm-3 was successfully made without disturbing the high crystallographic quality of the epitaxial layer. Photoluminescence measurements show that the nitrogen atoms introduced into the epitaxial layer act as isoelectronic luminescence centers. The effective sticking coefficient of ionized nitrogen for GaAs1-xPx at 580°C is estimated as the order of 0.01.",

author = "Yuichi Matsushima and Gonda, {Shun ichi} and Yunosuke Makita and Seiji Mukai",

year = "1978",

doi = "10.1016/0022-0248(78)90384-6",

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volume = "43",

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journal = "Journal of Crystal Growth",

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T1 - Nitrogen doping into GaAs1-xPx using ionized beam in molecular beam epitaxy

AU - Matsushima, Yuichi

AU - Gonda, Shun ichi

AU - Makita, Yunosuke

AU - Mukai, Seiji

PY - 1978

Y1 - 1978

N2 - A new method of nitrogen doping into GaAs1-xPx was attempted using the ionized beam in molecular beam epitaxy (MBE). With the ionization system attached to MBE system, the ionized nitrogen beam was supplied onto the substrate during MBE. Nitrogen doping of more than 1018 cm-3 was successfully made without disturbing the high crystallographic quality of the epitaxial layer. Photoluminescence measurements show that the nitrogen atoms introduced into the epitaxial layer act as isoelectronic luminescence centers. The effective sticking coefficient of ionized nitrogen for GaAs1-xPx at 580°C is estimated as the order of 0.01.

AB - A new method of nitrogen doping into GaAs1-xPx was attempted using the ionized beam in molecular beam epitaxy (MBE). With the ionization system attached to MBE system, the ionized nitrogen beam was supplied onto the substrate during MBE. Nitrogen doping of more than 1018 cm-3 was successfully made without disturbing the high crystallographic quality of the epitaxial layer. Photoluminescence measurements show that the nitrogen atoms introduced into the epitaxial layer act as isoelectronic luminescence centers. The effective sticking coefficient of ionized nitrogen for GaAs1-xPx at 580°C is estimated as the order of 0.01.

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SP - 281

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Nitrogen doping into GaAs_1-xP_x using ionized beam in molecular beam epitaxy

Abstract

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