Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent

Kazuhiko Kusunoki*, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


The nitrogen doping behavior of 4H-SiC was investigated by the top-seeded solution growth technique using Si-Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5 vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020 cm-3 was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019 cm-3. The lowest resistivity of approximately 0.010 Ω cm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed.

Original languageEnglish
Pages (from-to)60-65
Number of pages6
JournalJournal of Crystal Growth
Publication statusPublished - 2014 Apr 15
Externally publishedYes


  • A1. Doping
  • A1. Solvents
  • A2. Growth from solutions
  • A2. Top seeded solution growth
  • B1. Inorganic compounds
  • B2. Semiconducting silicon compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry


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