Nitrogen doping of znse and zncdse with the assistance of thermal energy and photon energy

Shigeyuki Matsumoto; Hiroyuki Tosaka; Takashi Yoshida; Masakazu Kobayashi; Akihiko Yoshikawa

doi:10.1143/jjap.32.731

Nitrogen doping of znse and zncdse with the assistance of thermal energy and photon energy

Shigeyuki Matsumoto, Hiroyuki Tosaka, Takashi Yoshida, Masakazu Kobayashi, Akihiko Yoshikawa

Research output: Contribution to journal › Article › peer-review

Abstract

Two methods were examined for doping nitrogen into ZnSe and ZnCdSe. N₂gas was thermally excited in the first method. The photoluminescence (PL) spectra showed that acceptor levels were formed in the film; this feature was similar to that observed in the samples doped with nonexcited N₂gas. The second method utilized pho-toexcited N₂O and N₂gases using vacuum ultraviolet (VUV) light. A deuterium lamp was used for the VUV-light source. Deep-emission-dominant PL spectra were observed when films were doped using photoexcited N₂O gas. N₂O gas was then mixed with N₂gas to control the photodecomposition process and improve the film quality. Samples doped using the mixed gas exhibited well-resolved near-band-edge features. The PL spectrum of the ZnO.9 Cdo.iSe sample doped using the photoexcited mixed gas showed donor-acceptor pair emission.

Original language	English
Pages (from-to)	731-735
Number of pages	5
Journal	Japanese journal of applied physics
Volume	32
Issue number	8 R
DOIs	https://doi.org/10.1143/jjap.32.731
Publication status	Published - 1993 Feb
Externally published	Yes

Keywords

Deuterium lamp
Nitrous oxide
Photo-assisted doping
ZnCdSe
ZnSe

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Nitrogen doping of znse and zncdse with the assistance of thermal energy and photon energy",

abstract = "Two methods were examined for doping nitrogen into ZnSe and ZnCdSe. N2gas was thermally excited in the first method. The photoluminescence (PL) spectra showed that acceptor levels were formed in the film; this feature was similar to that observed in the samples doped with nonexcited N2gas. The second method utilized pho-toexcited N2O and N2gases using vacuum ultraviolet (VUV) light. A deuterium lamp was used for the VUV-light source. Deep-emission-dominant PL spectra were observed when films were doped using photoexcited N2O gas. N2O gas was then mixed with N2gas to control the photodecomposition process and improve the film quality. Samples doped using the mixed gas exhibited well-resolved near-band-edge features. The PL spectrum of the ZnO.9 Cdo.iSe sample doped using the photoexcited mixed gas showed donor-acceptor pair emission.",

keywords = "Deuterium lamp, Nitrous oxide, Photo-assisted doping, ZnCdSe, ZnSe",

author = "Shigeyuki Matsumoto and Hiroyuki Tosaka and Takashi Yoshida and Masakazu Kobayashi and Akihiko Yoshikawa",

year = "1993",

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doi = "10.1143/jjap.32.731",

language = "English",

volume = "32",

pages = "731--735",

journal = "Japanese journal of applied physics",

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TY - JOUR

T1 - Nitrogen doping of znse and zncdse with the assistance of thermal energy and photon energy

AU - Matsumoto, Shigeyuki

AU - Tosaka, Hiroyuki

AU - Yoshida, Takashi

AU - Kobayashi, Masakazu

AU - Yoshikawa, Akihiko

PY - 1993/2

Y1 - 1993/2

N2 - Two methods were examined for doping nitrogen into ZnSe and ZnCdSe. N2gas was thermally excited in the first method. The photoluminescence (PL) spectra showed that acceptor levels were formed in the film; this feature was similar to that observed in the samples doped with nonexcited N2gas. The second method utilized pho-toexcited N2O and N2gases using vacuum ultraviolet (VUV) light. A deuterium lamp was used for the VUV-light source. Deep-emission-dominant PL spectra were observed when films were doped using photoexcited N2O gas. N2O gas was then mixed with N2gas to control the photodecomposition process and improve the film quality. Samples doped using the mixed gas exhibited well-resolved near-band-edge features. The PL spectrum of the ZnO.9 Cdo.iSe sample doped using the photoexcited mixed gas showed donor-acceptor pair emission.

AB - Two methods were examined for doping nitrogen into ZnSe and ZnCdSe. N2gas was thermally excited in the first method. The photoluminescence (PL) spectra showed that acceptor levels were formed in the film; this feature was similar to that observed in the samples doped with nonexcited N2gas. The second method utilized pho-toexcited N2O and N2gases using vacuum ultraviolet (VUV) light. A deuterium lamp was used for the VUV-light source. Deep-emission-dominant PL spectra were observed when films were doped using photoexcited N2O gas. N2O gas was then mixed with N2gas to control the photodecomposition process and improve the film quality. Samples doped using the mixed gas exhibited well-resolved near-band-edge features. The PL spectrum of the ZnO.9 Cdo.iSe sample doped using the photoexcited mixed gas showed donor-acceptor pair emission.

KW - Deuterium lamp

KW - Nitrous oxide

KW - Photo-assisted doping

KW - ZnCdSe

KW - ZnSe

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JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 8 R

ER -

Nitrogen doping of znse and zncdse with the assistance of thermal energy and photon energy

Abstract

Keywords

ASJC Scopus subject areas

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