Nitrogen profile in SiOxNy prepared by thermal nitridation of ozone oxide

Kaoru Nakajima; Kenji Kimura; Akira Kurokawa; Shingo Ichimura; Hisashi Fukuda

doi:10.1143/jjap.40.4011

Nitrogen profile in SiO_xN_y prepared by thermal nitridation of ozone oxide

Kaoru Nakajima^*, Kenji Kimura, Akira Kurokawa, Shingo Ichimura, Hisashi Fukuda

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Ultrathin silicon oxynitride films are prepared by ozone and thermal oxidation of Si(001) followed by rapid thermal nitridation. The nitrogen depth profiles in these films are measured by high-resolution Rutherford backscattering spectroscopy. The observed nitrogen profiles are essentially similar, having a peak at the SiO₂/Si interface, although the interface strain in the ozone oxide is known to be much smaller than that of the thermal oxide. This indicates that the interface strain relaxation due to the nitrogen incorporation is not responsible for the nitrogen accumulation at the interface.

Original language	English
Pages (from-to)	4011-4012
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.40.4011
Publication status	Published - 2001 Jun
Externally published	Yes

Keywords

High-resolution RBS
Interface strain
Ozone oxidation
Silicon oxynitride

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.40.4011

Cite this

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title = "Nitrogen profile in SiOxNy prepared by thermal nitridation of ozone oxide",

abstract = "Ultrathin silicon oxynitride films are prepared by ozone and thermal oxidation of Si(001) followed by rapid thermal nitridation. The nitrogen depth profiles in these films are measured by high-resolution Rutherford backscattering spectroscopy. The observed nitrogen profiles are essentially similar, having a peak at the SiO2/Si interface, although the interface strain in the ozone oxide is known to be much smaller than that of the thermal oxide. This indicates that the interface strain relaxation due to the nitrogen incorporation is not responsible for the nitrogen accumulation at the interface.",

keywords = "High-resolution RBS, Interface strain, Ozone oxidation, Silicon oxynitride",

author = "Kaoru Nakajima and Kenji Kimura and Akira Kurokawa and Shingo Ichimura and Hisashi Fukuda",

year = "2001",

month = jun,

doi = "10.1143/jjap.40.4011",

language = "English",

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T1 - Nitrogen profile in SiOxNy prepared by thermal nitridation of ozone oxide

AU - Nakajima, Kaoru

AU - Kimura, Kenji

AU - Kurokawa, Akira

AU - Ichimura, Shingo

AU - Fukuda, Hisashi

PY - 2001/6

Y1 - 2001/6

N2 - Ultrathin silicon oxynitride films are prepared by ozone and thermal oxidation of Si(001) followed by rapid thermal nitridation. The nitrogen depth profiles in these films are measured by high-resolution Rutherford backscattering spectroscopy. The observed nitrogen profiles are essentially similar, having a peak at the SiO2/Si interface, although the interface strain in the ozone oxide is known to be much smaller than that of the thermal oxide. This indicates that the interface strain relaxation due to the nitrogen incorporation is not responsible for the nitrogen accumulation at the interface.

AB - Ultrathin silicon oxynitride films are prepared by ozone and thermal oxidation of Si(001) followed by rapid thermal nitridation. The nitrogen depth profiles in these films are measured by high-resolution Rutherford backscattering spectroscopy. The observed nitrogen profiles are essentially similar, having a peak at the SiO2/Si interface, although the interface strain in the ozone oxide is known to be much smaller than that of the thermal oxide. This indicates that the interface strain relaxation due to the nitrogen incorporation is not responsible for the nitrogen accumulation at the interface.

KW - High-resolution RBS

KW - Interface strain

KW - Ozone oxidation

KW - Silicon oxynitride

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