No spin polarization of carriers in InGaN

A. Tackeuchi*, T. Kuroda, A. Shikanai, T. Sota, A. Kuramata, K. Domen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

18 Citations (Scopus)


We report the spin polarization of carriers photoexcited in bulk InGaN by circularly polarized femtosecond optical pulses. No spin polarization is observed in the picosecond time region using spin-dependent pump and probe absorption measurements with a time resolution of 0.35 ps. This is in contrast to the existence of spin polarization in GaAs quantum wells or in InGaAs quantum wells which have a spin relaxation time in the picosecond time region. The unique band structure of InGaN, which has weak spin-orbit interaction, and an in-plane potential fluctuation due to the compositional inhomogeneity of In explains the lack of spin polarization.

Original languageEnglish
Pages (from-to)1011-1014
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number3
Publication statusPublished - 2000 May
EventMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 1999 Jul 121999 Jul 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


Dive into the research topics of 'No spin polarization of carriers in InGaN'. Together they form a unique fingerprint.

Cite this