Nonpolar AlBN (112̄0) and (11̄00) films grown on SiC substrates

Tetsuya Akasaka; Yasuyuki Kobayashi; Toshiki Makimoto

doi:10.1063/1.2766665

Nonpolar AlBN (112̄0) and (11̄00) films grown on SiC substrates

Tetsuya Akasaka^*, Yasuyuki Kobayashi, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Nonpolar AlBN (11 2- 0) and (1 1- 00) films were grown using flow-rate modulation epitaxy. The transmission electron diffraction and lattice image reflect the wurtzite crystal structure of an AlBN (11 2- 0) film. The boron compositions in AlBN (11 2- 0) and (1 1- 00) films (B∼2%), estimated by x-ray diffraction assuming the wurtzite structure, agree well with the compositions measured by secondary ion mass spectroscopy, indicating that boron atoms are incorporated exactly into the wurtzite lattice sites. The (11 2- 0) face is more promising than the (1 1- 00) one for the growth of nonpolar AlBN because it has fewer dangling bonds of nitrogen on the surface.

Original language	English
Article number	041914
Journal	Applied Physics Letters
Volume	91
Issue number	4
DOIs	https://doi.org/10.1063/1.2766665
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2766665

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title = "Nonpolar AlBN (11{\=2}0) and (1{\=1}00) films grown on SiC substrates",

abstract = "Nonpolar AlBN (11 2- 0) and (1 1- 00) films were grown using flow-rate modulation epitaxy. The transmission electron diffraction and lattice image reflect the wurtzite crystal structure of an AlBN (11 2- 0) film. The boron compositions in AlBN (11 2- 0) and (1 1- 00) films (B∼2%), estimated by x-ray diffraction assuming the wurtzite structure, agree well with the compositions measured by secondary ion mass spectroscopy, indicating that boron atoms are incorporated exactly into the wurtzite lattice sites. The (11 2- 0) face is more promising than the (1 1- 00) one for the growth of nonpolar AlBN because it has fewer dangling bonds of nitrogen on the surface.",

author = "Tetsuya Akasaka and Yasuyuki Kobayashi and Toshiki Makimoto",

note = "Funding Information: The authors would like to thank K. Torimitsu for his encouragement throughout this work. This work was partly supported by a Grant-in-Aid for Scientific Research (A) No. 18206004 from the Japan Society for the Promotion of Science.",

year = "2007",

doi = "10.1063/1.2766665",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Nonpolar AlBN (112̄0) and (11̄00) films grown on SiC substrates

AU - Akasaka, Tetsuya

AU - Kobayashi, Yasuyuki

AU - Makimoto, Toshiki

N1 - Funding Information: The authors would like to thank K. Torimitsu for his encouragement throughout this work. This work was partly supported by a Grant-in-Aid for Scientific Research (A) No. 18206004 from the Japan Society for the Promotion of Science.

PY - 2007

Y1 - 2007

N2 - Nonpolar AlBN (11 2- 0) and (1 1- 00) films were grown using flow-rate modulation epitaxy. The transmission electron diffraction and lattice image reflect the wurtzite crystal structure of an AlBN (11 2- 0) film. The boron compositions in AlBN (11 2- 0) and (1 1- 00) films (B∼2%), estimated by x-ray diffraction assuming the wurtzite structure, agree well with the compositions measured by secondary ion mass spectroscopy, indicating that boron atoms are incorporated exactly into the wurtzite lattice sites. The (11 2- 0) face is more promising than the (1 1- 00) one for the growth of nonpolar AlBN because it has fewer dangling bonds of nitrogen on the surface.

AB - Nonpolar AlBN (11 2- 0) and (1 1- 00) films were grown using flow-rate modulation epitaxy. The transmission electron diffraction and lattice image reflect the wurtzite crystal structure of an AlBN (11 2- 0) film. The boron compositions in AlBN (11 2- 0) and (1 1- 00) films (B∼2%), estimated by x-ray diffraction assuming the wurtzite structure, agree well with the compositions measured by secondary ion mass spectroscopy, indicating that boron atoms are incorporated exactly into the wurtzite lattice sites. The (11 2- 0) face is more promising than the (1 1- 00) one for the growth of nonpolar AlBN because it has fewer dangling bonds of nitrogen on the surface.

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JF - Applied Physics Letters

IS - 4

M1 - 041914

ER -

Nonpolar AlBN (112̄0) and (11̄00) films grown on SiC substrates

Abstract

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