Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

H. Takei*, T. Suzuki, T. Katsufuji

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)


The authors found that capacitance of polycrystalline spinel Fe V2 O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (∼1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions.

Original languageEnglish
Article number072506
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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