Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5-x/Pt, Pt structure

Qi Wang; Yaomi Itoh; Tsuyoshi Hasegawa; Tohru Tsuruoka; Shu Yamaguchi; Satoshi Watanabe; Toshiro Hiramoto; Masakazu Aono

doi:10.1063/1.4811122

Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta₂O_5-x/Pt, Pt structure

Qi Wang^*, Yaomi Itoh, Tsuyoshi Hasegawa, Tohru Tsuruoka, Shu Yamaguchi, Satoshi Watanabe, Toshiro Hiramoto, Masakazu Aono

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Nonvolatile three-terminal operation is demonstrated using a Pt/Ta ₂O_5-x/Pt, Pt structure, by controlling oxygen vacancy drift to make/annihilate a conductive channel between a source and a drain. The as-fabricated device is in an off-state. Application of a positive gate bias moves oxygen vacancies in a Ta₂O_5-x layer towards a channel region, making the channel region conductive. The conductive channel remains even after unloading the gate bias. Application of a negative gate bias, which moves the oxygen vacancies back towards the gate electrode, is required to turn off the device. The device shows a high ON/OFF ratio of up to 10 ⁶.

Original language	English
Article number	233508
Journal	Applied Physics Letters
Volume	102
Issue number	23
DOIs	https://doi.org/10.1063/1.4811122
Publication status	Published - 2013 Jun 10
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4811122

Cite this

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title = "Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5-x/Pt, Pt structure",

abstract = "Nonvolatile three-terminal operation is demonstrated using a Pt/Ta 2O5-x/Pt, Pt structure, by controlling oxygen vacancy drift to make/annihilate a conductive channel between a source and a drain. The as-fabricated device is in an off-state. Application of a positive gate bias moves oxygen vacancies in a Ta2O5-x layer towards a channel region, making the channel region conductive. The conductive channel remains even after unloading the gate bias. Application of a negative gate bias, which moves the oxygen vacancies back towards the gate electrode, is required to turn off the device. The device shows a high ON/OFF ratio of up to 10 6.",

author = "Qi Wang and Yaomi Itoh and Tsuyoshi Hasegawa and Tohru Tsuruoka and Shu Yamaguchi and Satoshi Watanabe and Toshiro Hiramoto and Masakazu Aono",

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T1 - Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5-x/Pt, Pt structure

AU - Wang, Qi

AU - Itoh, Yaomi

AU - Hasegawa, Tsuyoshi

AU - Tsuruoka, Tohru

AU - Yamaguchi, Shu

AU - Watanabe, Satoshi

AU - Hiramoto, Toshiro

AU - Aono, Masakazu

N1 - Funding Information: The project was financially supported by the Japan Science and Technology Agency (JST)/CREST “Atom Transistor Project.”

PY - 2013/6/10

Y1 - 2013/6/10

N2 - Nonvolatile three-terminal operation is demonstrated using a Pt/Ta 2O5-x/Pt, Pt structure, by controlling oxygen vacancy drift to make/annihilate a conductive channel between a source and a drain. The as-fabricated device is in an off-state. Application of a positive gate bias moves oxygen vacancies in a Ta2O5-x layer towards a channel region, making the channel region conductive. The conductive channel remains even after unloading the gate bias. Application of a negative gate bias, which moves the oxygen vacancies back towards the gate electrode, is required to turn off the device. The device shows a high ON/OFF ratio of up to 10 6.

AB - Nonvolatile three-terminal operation is demonstrated using a Pt/Ta 2O5-x/Pt, Pt structure, by controlling oxygen vacancy drift to make/annihilate a conductive channel between a source and a drain. The as-fabricated device is in an off-state. Application of a positive gate bias moves oxygen vacancies in a Ta2O5-x layer towards a channel region, making the channel region conductive. The conductive channel remains even after unloading the gate bias. Application of a negative gate bias, which moves the oxygen vacancies back towards the gate electrode, is required to turn off the device. The device shows a high ON/OFF ratio of up to 10 6.

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Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta₂O_5-x/Pt, Pt structure

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