Novel functional devices of transition metal dichalcogenide monolayers

Taishi Takenobu; Jiang Pu; Lain Jong Li; Yoshihiro Iwasa

doi:10.1109/AM-FPD.2014.6867198

Novel functional devices of transition metal dichalcogenide monolayers

Taishi Takenobu, Jiang Pu, Lain Jong Li, Yoshihiro Iwasa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recently, the transition metal dichalcogenide (TMDC) monolayers, such as MoS₂, MoSe₂ and WSe₂, have attracted considerable interest because of its high carrier mobility, mechanical strength, large intrinsic bandgap and optical properties. Although many researches have been done by mechanically exfoliated TMDC monolayers, the chemical vapour deposition (CVD) growth of TMDC thin films that could be transferred onto other arbitrary substrates was reported, thereby providing a path forward to develop large-area CMOS electronics built onto flexible plastic and stretchable rubber substrates. Here, we firstly demonstrate the fabrication of CVD-growth MoS ₂ thin-film transistors (TFTs) using ion gel as elastic gate dielectrics, opening a route for atomically thin electronics and optoelectronics on flexible and stretchable substrates.

Original language	English
Title of host publication	Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
Publisher	IEEE Computer Society
Pages	283-286
Number of pages	4
ISBN (Print)	9784863483958
DOIs	https://doi.org/10.1109/AM-FPD.2014.6867198
Publication status	Published - 2014
Event	21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto Duration: 2014 Jul 2 → 2014 Jul 4

Other

Other	21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
City	Kyoto
Period	14/7/2 → 14/7/4

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/AM-FPD.2014.6867198

Cite this

Takenobu, T., Pu, J., Li, L. J., & Iwasa, Y. (2014). Novel functional devices of transition metal dichalcogenide monolayers. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 283-286). Article 6867198 IEEE Computer Society. https://doi.org/10.1109/AM-FPD.2014.6867198

Novel functional devices of transition metal dichalcogenide monolayers. / Takenobu, Taishi; Pu, Jiang; Li, Lain Jong et al.
Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. p. 283-286 6867198.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takenobu, T, Pu, J, Li, LJ & Iwasa, Y 2014, Novel functional devices of transition metal dichalcogenide monolayers. in Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 6867198, IEEE Computer Society, pp. 283-286, 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014, Kyoto, 14/7/2. https://doi.org/10.1109/AM-FPD.2014.6867198

@inproceedings{8424a57f7e484c7fa11ca70bc1495c31,

title = "Novel functional devices of transition metal dichalcogenide monolayers",

abstract = "Recently, the transition metal dichalcogenide (TMDC) monolayers, such as MoS2, MoSe2 and WSe2, have attracted considerable interest because of its high carrier mobility, mechanical strength, large intrinsic bandgap and optical properties. Although many researches have been done by mechanically exfoliated TMDC monolayers, the chemical vapour deposition (CVD) growth of TMDC thin films that could be transferred onto other arbitrary substrates was reported, thereby providing a path forward to develop large-area CMOS electronics built onto flexible plastic and stretchable rubber substrates. Here, we firstly demonstrate the fabrication of CVD-growth MoS 2 thin-film transistors (TFTs) using ion gel as elastic gate dielectrics, opening a route for atomically thin electronics and optoelectronics on flexible and stretchable substrates.",

author = "Taishi Takenobu and Jiang Pu and Li, {Lain Jong} and Yoshihiro Iwasa",

year = "2014",

doi = "10.1109/AM-FPD.2014.6867198",

language = "English",

isbn = "9784863483958",

pages = "283--286",

booktitle = "Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",

publisher = "IEEE Computer Society",

note = "21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 ; Conference date: 02-07-2014 Through 04-07-2014",

}

TY - GEN

T1 - Novel functional devices of transition metal dichalcogenide monolayers

AU - Takenobu, Taishi

AU - Pu, Jiang

AU - Li, Lain Jong

AU - Iwasa, Yoshihiro

PY - 2014

Y1 - 2014

N2 - Recently, the transition metal dichalcogenide (TMDC) monolayers, such as MoS2, MoSe2 and WSe2, have attracted considerable interest because of its high carrier mobility, mechanical strength, large intrinsic bandgap and optical properties. Although many researches have been done by mechanically exfoliated TMDC monolayers, the chemical vapour deposition (CVD) growth of TMDC thin films that could be transferred onto other arbitrary substrates was reported, thereby providing a path forward to develop large-area CMOS electronics built onto flexible plastic and stretchable rubber substrates. Here, we firstly demonstrate the fabrication of CVD-growth MoS 2 thin-film transistors (TFTs) using ion gel as elastic gate dielectrics, opening a route for atomically thin electronics and optoelectronics on flexible and stretchable substrates.

AB - Recently, the transition metal dichalcogenide (TMDC) monolayers, such as MoS2, MoSe2 and WSe2, have attracted considerable interest because of its high carrier mobility, mechanical strength, large intrinsic bandgap and optical properties. Although many researches have been done by mechanically exfoliated TMDC monolayers, the chemical vapour deposition (CVD) growth of TMDC thin films that could be transferred onto other arbitrary substrates was reported, thereby providing a path forward to develop large-area CMOS electronics built onto flexible plastic and stretchable rubber substrates. Here, we firstly demonstrate the fabrication of CVD-growth MoS 2 thin-film transistors (TFTs) using ion gel as elastic gate dielectrics, opening a route for atomically thin electronics and optoelectronics on flexible and stretchable substrates.

UR - http://www.scopus.com/inward/record.url?scp=84906215945&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906215945&partnerID=8YFLogxK

U2 - 10.1109/AM-FPD.2014.6867198

DO - 10.1109/AM-FPD.2014.6867198

M3 - Conference contribution

AN - SCOPUS:84906215945

SN - 9784863483958

SP - 283

EP - 286

BT - Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

PB - IEEE Computer Society

T2 - 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014

Y2 - 2 July 2014 through 4 July 2014

ER -

Novel functional devices of transition metal dichalcogenide monolayers

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