Novel functionality and material for Si-photonics: Two-photon absorption switching and antimonide hetero-genius epitaxy

Tak Keung Liang; Kouichi Akahane; Naokatsu Yamamoto; Luis Romeu Nunes; Tetsuya Kawanishi; Masahiro Tsuchiya

doi:10.1093/ietele/e90-c.2.409

Novel functionality and material for Si-photonics: Two-photon absorption switching and antimonide hetero-genius epitaxy

Tak Keung Liang^*, Kouichi Akahane, Naokatsu Yamamoto, Luis Romeu Nunes, Tetsuya Kawanishi, Masahiro Tsuchiya

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 μm at room temperature, so that the new function can be developed on Si-photonics using this QW.

Original language	English
Pages (from-to)	409-414
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E90-C
Issue number	2
DOIs	https://doi.org/10.1093/ietele/e90-c.2.409
Publication status	Published - 2007 Feb
Externally published	Yes

Keywords

Gallium antimonide
Heteroepitaxy
Optical switch
Photonic devices
Silicon photonics
Two-photon absorption

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1093/ietele/e90-c.2.409

Cite this

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title = "Novel functionality and material for Si-photonics: Two-photon absorption switching and antimonide hetero-genius epitaxy",

abstract = "Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 μm at room temperature, so that the new function can be developed on Si-photonics using this QW.",

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author = "Liang, {Tak Keung} and Kouichi Akahane and Naokatsu Yamamoto and Nunes, {Luis Romeu} and Tetsuya Kawanishi and Masahiro Tsuchiya",

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doi = "10.1093/ietele/e90-c.2.409",

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T2 - Two-photon absorption switching and antimonide hetero-genius epitaxy

AU - Liang, Tak Keung

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Nunes, Luis Romeu

AU - Kawanishi, Tetsuya

AU - Tsuchiya, Masahiro

PY - 2007/2

Y1 - 2007/2

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AB - Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 μm at room temperature, so that the new function can be developed on Si-photonics using this QW.

KW - Gallium antimonide

KW - Heteroepitaxy

KW - Optical switch

KW - Photonic devices

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Novel functionality and material for Si-photonics: Two-photon absorption switching and antimonide hetero-genius epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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