Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching

Meishoku Koh; Tomomi Goto; Atsushi Sugita; Takashi Tanii; Tomoyuki Iida; Takahiro Shinada; Takashi Matsukawa; Iwao Ohdomari

doi:10.1143/jjap.40.2837

Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching

Meishoku Koh^*, Tomomi Goto, Atsushi Sugita, Takashi Tanii, Tomoyuki Iida, Takahiro Shinada, Takashi Matsukawa, Iwao Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO₂ in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N₂H₄). A p-type Si(100) substrate with 27-nm-thick SiO₂ was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO₂ was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO₂ layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).

Original language	English
Pages (from-to)	2837-2839
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.40.2837
Publication status	Published - 2001 Apr

Keywords

Dopant ion implantation
Field emitter
HF
Hydrazine
Nanopyramid array
Si
SiO
Wet etching

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.40.2837

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Koh, M., Goto, T., Sugita, A., Tanii, T., Iida, T., Shinada, T., Matsukawa, T., & Ohdomari, I. (2001). Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(4 B), 2837-2839. https://doi.org/10.1143/jjap.40.2837

Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching. / Koh, Meishoku; Goto, Tomomi; Sugita, Atsushi et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 4 B, 04.2001, p. 2837-2839.

Research output: Contribution to journal › Article › peer-review

Koh, M, Goto, T, Sugita, A, Tanii, T, Iida, T, Shinada, T, Matsukawa, T & Ohdomari, I 2001, 'Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 4 B, pp. 2837-2839. https://doi.org/10.1143/jjap.40.2837

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abstract = "A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).",

keywords = "Dopant ion implantation, Field emitter, HF, Hydrazine, Nanopyramid array, Si, SiO, Wet etching",

author = "Meishoku Koh and Tomomi Goto and Atsushi Sugita and Takashi Tanii and Tomoyuki Iida and Takahiro Shinada and Takashi Matsukawa and Iwao Ohdomari",

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AU - Koh, Meishoku

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AU - Sugita, Atsushi

AU - Tanii, Takashi

AU - Iida, Tomoyuki

AU - Shinada, Takahiro

AU - Matsukawa, Takashi

AU - Ohdomari, Iwao

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N2 - A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).

AB - A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).

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KW - Field emitter

KW - HF

KW - Hydrazine

KW - Nanopyramid array

KW - Si

KW - SiO

KW - Wet etching

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Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching

Abstract

Keywords

ASJC Scopus subject areas

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