Nucleation of tungsten by chemical vapor deposition from WF6 and SiH4

Y. Kajikawa; T. Tsumura; Suguru Noda; H. Komiyama; Y. Shimogaki

doi:10.1109/IMNC.2003.1268743

Nucleation of tungsten by chemical vapor deposition from WF₆ and SiH₄

Y. Kajikawa, T. Tsumura, Suguru Noda, H. Komiyama, Y. Shimogaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we investigated the nucleation process of W from WF₆ and SiH₄by using a cold wall-type CVD reactor. W was then deposited from WF₆(0.42vol%)SiHsub ₄(0.42vol%) H₂ (33vol%)Ar at 5 Torr. TiN substrates were heated up under Ar atmosphere and hold at 673 K for 20 min under 35 vol% H₂Ar atmosphere at 5 Torr. The surface states was monitored in-situ by using field emission scanning electron microscopy (FESEM), micro Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS).

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	256-257
Number of pages	2
ISBN (Electronic)	4891140402, 9784891140403
DOIs	https://doi.org/10.1109/IMNC.2003.1268743
Publication status	Published - 2003
Externally published	Yes
Event	International Microprocesses and Nanotechnology Conference, MNC 2003 - Tokyo, Japan Duration: 2003 Oct 29 → 2003 Oct 31

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2003
Country/Territory	Japan
City	Tokyo
Period	03/10/29 → 03/10/31

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2003.1268743

Cite this

Kajikawa, Y., Tsumura, T., Noda, S., Komiyama, H., & Shimogaki, Y. (2003). Nucleation of tungsten by chemical vapor deposition from WF₆ and SiH₄ In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003 (pp. 256-257). Article 1268743 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2003.1268743

Nucleation of tungsten by chemical vapor deposition from WF₆ and SiH₄ . / Kajikawa, Y.; Tsumura, T.; Noda, Suguru et al.
Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 256-257 1268743.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kajikawa, Y, Tsumura, T, Noda, S, Komiyama, H & Shimogaki, Y 2003, Nucleation of tungsten by chemical vapor deposition from WF₆ and SiH₄ in Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003., 1268743, Institute of Electrical and Electronics Engineers Inc., pp. 256-257, International Microprocesses and Nanotechnology Conference, MNC 2003, Tokyo, Japan, 03/10/29. https://doi.org/10.1109/IMNC.2003.1268743

Kajikawa Y, Tsumura T, Noda S, Komiyama H, Shimogaki Y. Nucleation of tungsten by chemical vapor deposition from WF₆ and SiH₄ In Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 256-257. 1268743 doi: 10.1109/IMNC.2003.1268743

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