Numerical simulation of transient heat conduction in nanoscale Si devices

Yoshinari Kamakura; Tomofumi Zushi; Takanobu Watanabe; Nobuya Mori; Kenji Taniguchi

doi:10.1109/ICSICT.2010.5667342

Numerical simulation of transient heat conduction in nanoscale Si devices

Yoshinari Kamakura^*, Tomofumi Zushi, Takanobu Watanabe, Nobuya Mori, Kenji Taniguchi

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n⁺-n-n⁺ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale Si/SiO2 systems. It is shown that the lattice temperature at the drain edge is raised by the hot electron injection from the source after turning on the device, and the impact of this phenomenon becomes more significant in the smaller devices due to the worse heat conductivity.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	1745-1748
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2010.5667342
Publication status	Published - 2010 Dec 1
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 2010 Nov 1 → 2010 Nov 4

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	10/11/1 → 10/11/4

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/ICSICT.2010.5667342

Cite this

Kamakura, Y., Zushi, T., Watanabe, T., Mori, N., & Taniguchi, K. (2010). Numerical simulation of transient heat conduction in nanoscale Si devices. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1745-1748). [5667342] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667342

Numerical simulation of transient heat conduction in nanoscale Si devices. / Kamakura, Yoshinari; Zushi, Tomofumi; Watanabe, Takanobu et al.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1745-1748 5667342 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kamakura, Y, Zushi, T, Watanabe, T, Mori, N & Taniguchi, K 2010, Numerical simulation of transient heat conduction in nanoscale Si devices. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667342, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1745-1748, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 10/11/1. https://doi.org/10.1109/ICSICT.2010.5667342

Kamakura Y, Zushi T, Watanabe T, Mori N, Taniguchi K. Numerical simulation of transient heat conduction in nanoscale Si devices. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1745-1748. 5667342. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667342

Kamakura, Yoshinari ; Zushi, Tomofumi ; Watanabe, Takanobu et al. / Numerical simulation of transient heat conduction in nanoscale Si devices. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 1745-1748 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{96e5fe6b70e94ff9a26e04e1b38dab9b,

title = "Numerical simulation of transient heat conduction in nanoscale Si devices",

abstract = "Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n+-n-n+ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale Si/SiO2 systems. It is shown that the lattice temperature at the drain edge is raised by the hot electron injection from the source after turning on the device, and the impact of this phenomenon becomes more significant in the smaller devices due to the worse heat conductivity.",

author = "Yoshinari Kamakura and Tomofumi Zushi and Takanobu Watanabe and Nobuya Mori and Kenji Taniguchi",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ICSICT.2010.5667342",

language = "English",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

pages = "1745--1748",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

}

TY - GEN

T1 - Numerical simulation of transient heat conduction in nanoscale Si devices

AU - Kamakura, Yoshinari

AU - Zushi, Tomofumi

AU - Watanabe, Takanobu

AU - Mori, Nobuya

AU - Taniguchi, Kenji

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n+-n-n+ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale Si/SiO2 systems. It is shown that the lattice temperature at the drain edge is raised by the hot electron injection from the source after turning on the device, and the impact of this phenomenon becomes more significant in the smaller devices due to the worse heat conductivity.

AB - Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n+-n-n+ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale Si/SiO2 systems. It is shown that the lattice temperature at the drain edge is raised by the hot electron injection from the source after turning on the device, and the impact of this phenomenon becomes more significant in the smaller devices due to the worse heat conductivity.

UR - http://www.scopus.com/inward/record.url?scp=78751503288&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751503288&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2010.5667342

DO - 10.1109/ICSICT.2010.5667342

M3 - Conference contribution

AN - SCOPUS:78751503288

SN - 9781424457984

T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 1745

EP - 1748

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

Y2 - 1 November 2010 through 4 November 2010

ER -

Numerical simulation of transient heat conduction in nanoscale Si devices

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