Observation of cavity polaritons in InGaN quantum well microcavities

T. Tawara; H. Gotoh; T. Akasaka; N. Kobayashi; T. Makimoto; T. Saitoh

doi:10.1002/pssc.200460308

Observation of cavity polaritons in InGaN quantum well microcavities

T. Tawara^*, H. Gotoh, T. Akasaka, N. Kobayashi, T. Makimoto, T. Saitoh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We observe cavity polaritons in InGaN quantum well (QW) microcavities at room temperature. The crack-free microcavities with a high quality factor (Q) of 400 are fabricated by the wafer bonding of InGaN QW layers and dielectric distributed Bragg reflectors (DBRs). The anti-crossing behavior of cavity polaritons is confirmed with a vacuum-field Rabi splitting in the reflection measurements. We also observe the splitting in photoluminescence (PL) spectra. The oscillator strength of the InGaN QW excitons is found to be one order of magnitude larger than that of GaAs QW excitons.

Original language	English
Pages (from-to)	809-812
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	2
DOIs	https://doi.org/10.1002/pssc.200460308
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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abstract = "We observe cavity polaritons in InGaN quantum well (QW) microcavities at room temperature. The crack-free microcavities with a high quality factor (Q) of 400 are fabricated by the wafer bonding of InGaN QW layers and dielectric distributed Bragg reflectors (DBRs). The anti-crossing behavior of cavity polaritons is confirmed with a vacuum-field Rabi splitting in the reflection measurements. We also observe the splitting in photoluminescence (PL) spectra. The oscillator strength of the InGaN QW excitons is found to be one order of magnitude larger than that of GaAs QW excitons.",

author = "T. Tawara and H. Gotoh and T. Akasaka and N. Kobayashi and T. Makimoto and T. Saitoh",

year = "2005",

doi = "10.1002/pssc.200460308",

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journal = "Physica Status Solidi C: Conferences",

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T1 - Observation of cavity polaritons in InGaN quantum well microcavities

AU - Tawara, T.

AU - Gotoh, H.

AU - Akasaka, T.

AU - Kobayashi, N.

AU - Makimoto, T.

AU - Saitoh, T.

PY - 2005

Y1 - 2005

N2 - We observe cavity polaritons in InGaN quantum well (QW) microcavities at room temperature. The crack-free microcavities with a high quality factor (Q) of 400 are fabricated by the wafer bonding of InGaN QW layers and dielectric distributed Bragg reflectors (DBRs). The anti-crossing behavior of cavity polaritons is confirmed with a vacuum-field Rabi splitting in the reflection measurements. We also observe the splitting in photoluminescence (PL) spectra. The oscillator strength of the InGaN QW excitons is found to be one order of magnitude larger than that of GaAs QW excitons.

AB - We observe cavity polaritons in InGaN quantum well (QW) microcavities at room temperature. The crack-free microcavities with a high quality factor (Q) of 400 are fabricated by the wafer bonding of InGaN QW layers and dielectric distributed Bragg reflectors (DBRs). The anti-crossing behavior of cavity polaritons is confirmed with a vacuum-field Rabi splitting in the reflection measurements. We also observe the splitting in photoluminescence (PL) spectra. The oscillator strength of the InGaN QW excitons is found to be one order of magnitude larger than that of GaAs QW excitons.

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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ER -

Observation of cavity polaritons in InGaN quantum well microcavities

Abstract

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