Observation of cavity polaritons in InGaN quantum well microcavities

T. Tawara*, H. Gotoh, T. Akasaka, N. Kobayashi, T. Makimoto, T. Saitoh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We observe cavity polaritons in InGaN quantum well (QW) microcavities at room temperature. The crack-free microcavities with a high quality factor (Q) of 400 are fabricated by the wafer bonding of InGaN QW layers and dielectric distributed Bragg reflectors (DBRs). The anti-crossing behavior of cavity polaritons is confirmed with a vacuum-field Rabi splitting in the reflection measurements. We also observe the splitting in photoluminescence (PL) spectra. The oscillator strength of the InGaN QW excitons is found to be one order of magnitude larger than that of GaAs QW excitons.

Original languageEnglish
Pages (from-to)809-812
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number2
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics


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