Observation of spin relaxation in InGaAs/AlAsSb quantum wells

Sotaro Izumi*, Shin Ichiro Gozu, Teruo Mozume, Yu Saeki, Takao Nukui, Atsushi Tackeuchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.

Original languageEnglish
Article number04DM03
JournalJapanese journal of applied physics
Issue number4 PART 2
Publication statusPublished - 2010 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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