Observation of spin relaxation in InGaAs/AlAsSb quantum wells

Sotaro Izumi; Shin Ichiro Gozu; Teruo Mozume; Yu Saeki; Takao Nukui; Atsushi Tackeuchi

doi:10.1143/JJAP.49.04DM03

Observation of spin relaxation in InGaAs/AlAsSb quantum wells

Sotaro Izumi^*, Shin Ichiro Gozu, Teruo Mozume, Yu Saeki, Takao Nukui, Atsushi Tackeuchi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.

Original language	English
Article number	04DM03
Journal	Japanese journal of applied physics
Volume	49
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.04DM03
Publication status	Published - 2010 Apr

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{6dd3556790fb4fabaf5ed6cd0207b023,

title = "Observation of spin relaxation in InGaAs/AlAsSb quantum wells",

abstract = "We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.",

author = "Sotaro Izumi and Gozu, {Shin Ichiro} and Teruo Mozume and Yu Saeki and Takao Nukui and Atsushi Tackeuchi",

year = "2010",

month = apr,

doi = "10.1143/JJAP.49.04DM03",

language = "English",

volume = "49",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 PART 2",

}

TY - JOUR

T1 - Observation of spin relaxation in InGaAs/AlAsSb quantum wells

AU - Izumi, Sotaro

AU - Gozu, Shin Ichiro

AU - Mozume, Teruo

AU - Saeki, Yu

AU - Nukui, Takao

AU - Tackeuchi, Atsushi

PY - 2010/4

Y1 - 2010/4

N2 - We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.

AB - We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 mm electron-heavy hole excitons at room temperature is obtained to be 27-54 ps for an excitation power of 20-100mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir-Aronov-Pikus process at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=77952681043&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952681043&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.04DM03

DO - 10.1143/JJAP.49.04DM03

M3 - Article

AN - SCOPUS:77952681043

SN - 0021-4922

VL - 49

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 4 PART 2

M1 - 04DM03

ER -

Observation of spin relaxation in InGaAs/AlAsSb quantum wells

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