Observation of sputtered Si surface irradiated with metal cluster complex ions

Yoshikazu Teranishi*, Kouji Kondou, Yukio Fujiwara, Hidehiko Nonaka, Misuhiro Tomita, Kazuhiro Yamamoto, Toshiyuki Fujimoto, Shingo Ichimura

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

9 Citations (Scopus)


We report the results of surface sputtering of Si using a proto type ion source to utilize a compact cluster ion source which was developed using Os 3(CO)12 as a low-damage sputtering source. The surface roughening of Si sputtered with cluster ions with an acceleration energy of 10 keV at incidence angles between 0 and 60° was investigated. The sputtered Si surface was observed using an atomic force microscope and a scanning electron microscope. At incident angles between 0 and 45°, the surface remained smooth while at 60°, roughening was observed.

Original languageEnglish
Pages (from-to)5528-5530
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 B
Publication statusPublished - 2006 Jun 20
Externally publishedYes


  • AFM
  • Ion cluster
  • Roughness
  • Sputter

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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