We report the results of surface sputtering of Si using a proto type ion source to utilize a compact cluster ion source which was developed using Os 3(CO)12 as a low-damage sputtering source. The surface roughening of Si sputtered with cluster ions with an acceleration energy of 10 keV at incidence angles between 0 and 60° was investigated. The sputtered Si surface was observed using an atomic force microscope and a scanning electron microscope. At incident angles between 0 and 45°, the surface remained smooth while at 60°, roughening was observed.
|Number of pages
|Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
|Published - 2006 Jun 20
- Ion cluster
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy