On the gain mechanism in GaN based laser diodes

G. Mohs*, T. Aoki, R. Shimano, M. Kuwata-Gonokami, S. Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


We investigate the gain mechanism in a current GaN based laser diode design using the variable stripe length method and optical nanosecond excitation. The combination of absorption measurements, gain spectra and photoluminescence excitation data allows us to understand the fundamental mechanisms responsible for gain in these devices. We conclude that optical amplification is due to a conventional two-dimensional electron-hole plasma in contrast to the spontaneous emission mechanism in similar light emitting diode structures.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalSolid State Communications
Issue number2
Publication statusPublished - 1998 Aug 21
Externally publishedYes


  • A. semiconductors
  • D. optical properties
  • E. nonlinear optics

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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