On the origin of the gate oxide failure evaluated by Raman spectroscopy

R. Yokogawa, M. Tomita, T. Mizukoshi, T. Hirano, K. Kusano, K. Sasaki, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The metal-oxide-semiconductor-field-effect-transistor (MOSFET) has been miniaturized for the high performance large-scale integrated-circuit (LSI). However, in the ultimately miniaturized MOSFET, the gate oxide failure with high leakage current is inevitable. In this study, we evaluated the origin of the gate oxide failure by Raman spectroscopy in conjunction with optical beam induced resistance change (OBIRCH) analysis. We confirmed the higher Raman intensity than the other positions at the gate oxide failure position, where the OBIRCH analysis shows the light emission. Moreover, we found that the origin on the gate oxide failure was high tensile strain in the gate polycrystalline silicon electrode.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
EditorsE. P. Gusev, P. J. Timans, F. Roozeboom, S. DeGendt, K. Kakushima, V. Narayanan, Z. Karim
PublisherElectrochemical Society Inc.
Pages237-243
Number of pages7
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States
Duration: 2015 May 242015 May 28

Publication series

NameECS Transactions
Number4
Volume66
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
Country/TerritoryUnited States
CityChicago
Period15/5/2415/5/28

ASJC Scopus subject areas

  • General Engineering

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