TY - GEN
T1 - On the origin of the gate oxide failure evaluated by Raman spectroscopy
AU - Yokogawa, R.
AU - Tomita, M.
AU - Mizukoshi, T.
AU - Hirano, T.
AU - Kusano, K.
AU - Sasaki, K.
AU - Ogura, A.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - The metal-oxide-semiconductor-field-effect-transistor (MOSFET) has been miniaturized for the high performance large-scale integrated-circuit (LSI). However, in the ultimately miniaturized MOSFET, the gate oxide failure with high leakage current is inevitable. In this study, we evaluated the origin of the gate oxide failure by Raman spectroscopy in conjunction with optical beam induced resistance change (OBIRCH) analysis. We confirmed the higher Raman intensity than the other positions at the gate oxide failure position, where the OBIRCH analysis shows the light emission. Moreover, we found that the origin on the gate oxide failure was high tensile strain in the gate polycrystalline silicon electrode.
AB - The metal-oxide-semiconductor-field-effect-transistor (MOSFET) has been miniaturized for the high performance large-scale integrated-circuit (LSI). However, in the ultimately miniaturized MOSFET, the gate oxide failure with high leakage current is inevitable. In this study, we evaluated the origin of the gate oxide failure by Raman spectroscopy in conjunction with optical beam induced resistance change (OBIRCH) analysis. We confirmed the higher Raman intensity than the other positions at the gate oxide failure position, where the OBIRCH analysis shows the light emission. Moreover, we found that the origin on the gate oxide failure was high tensile strain in the gate polycrystalline silicon electrode.
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U2 - 10.1149/06604.0237ecst
DO - 10.1149/06604.0237ecst
M3 - Conference contribution
AN - SCOPUS:84931451841
T3 - ECS Transactions
SP - 237
EP - 243
BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
A2 - Gusev, E. P.
A2 - Timans, P. J.
A2 - Roozeboom, F.
A2 - DeGendt, S.
A2 - Kakushima, K.
A2 - Narayanan, V.
A2 - Karim, Z.
PB - Electrochemical Society Inc.
T2 - Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
Y2 - 24 May 2015 through 28 May 2015
ER -