On the scaling limit of the Si-IGBTs with very narrow mesa structure

Katsumi Eikyu; Atsushi Sakai; Hitoshi Matsuura; Yoshito Nakazawa; Yutaka Akiyama; Yasuo Yamaguchi; Masahide Inuishi

doi:10.1109/ISPSD.2016.7520815

On the scaling limit of the Si-IGBTs with very narrow mesa structure

Katsumi Eikyu, Atsushi Sakai, Hitoshi Matsuura, Yoshito Nakazawa, Yutaka Akiyama, Yasuo Yamaguchi, Masahide Inuishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

41 Citations (Scopus)

Abstract

The very narrow mesa structures based on our 7th generation IGBT process are fabricated and it is found that the device with the narrowest mesa shows very poor short circuit (SC) withstand capability although it suppresses the conduction loss considerably. This poor SC capacity is caused by non-saturated output characteristics which are originated by collector bias induced barrier lowering in the middle of Si mesa. The current filamentation is observed in the 3D multi-cell short circuit simulation with self-heating and the SC capacity degradation due to the filamentation is enhanced in the narrower mesa structure.

Original language	English
Title of host publication	Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	211-214
Number of pages	4
ISBN (Electronic)	9781467387682
DOIs	https://doi.org/10.1109/ISPSD.2016.7520815
Publication status	Published - 2016 Jul 25
Externally published	Yes
Event	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic Duration: 2016 Jun 12 → 2016 Jun 16

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2016-July
ISSN (Print)	1063-6854

Other

Other	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Country/Territory	Czech Republic
City	Prague
Period	16/6/12 → 16/6/16

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/ISPSD.2016.7520815

Cite this

Eikyu, K., Sakai, A., Matsuura, H., Nakazawa, Y., Akiyama, Y., Yamaguchi, Y., & Inuishi, M. (2016). On the scaling limit of the Si-IGBTs with very narrow mesa structure. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 211-214). Article 7520815 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520815

On the scaling limit of the Si-IGBTs with very narrow mesa structure. / Eikyu, Katsumi; Sakai, Atsushi; Matsuura, Hitoshi et al.
Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 211-214 7520815 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Eikyu, K, Sakai, A, Matsuura, H, Nakazawa, Y, Akiyama, Y, Yamaguchi, Y & Inuishi, M 2016, On the scaling limit of the Si-IGBTs with very narrow mesa structure. in Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016., 7520815, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2016-July, Institute of Electrical and Electronics Engineers Inc., pp. 211-214, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 16/6/12. https://doi.org/10.1109/ISPSD.2016.7520815

Eikyu K, Sakai A, Matsuura H, Nakazawa Y, Akiyama Y, Yamaguchi Y et al. On the scaling limit of the Si-IGBTs with very narrow mesa structure. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 211-214. 7520815. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2016.7520815

Eikyu, Katsumi ; Sakai, Atsushi ; Matsuura, Hitoshi et al. / On the scaling limit of the Si-IGBTs with very narrow mesa structure. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 211-214 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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abstract = "The very narrow mesa structures based on our 7th generation IGBT process are fabricated and it is found that the device with the narrowest mesa shows very poor short circuit (SC) withstand capability although it suppresses the conduction loss considerably. This poor SC capacity is caused by non-saturated output characteristics which are originated by collector bias induced barrier lowering in the middle of Si mesa. The current filamentation is observed in the 3D multi-cell short circuit simulation with self-heating and the SC capacity degradation due to the filamentation is enhanced in the narrower mesa structure.",

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AU - Eikyu, Katsumi

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AU - Yamaguchi, Yasuo

AU - Inuishi, Masahide

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N2 - The very narrow mesa structures based on our 7th generation IGBT process are fabricated and it is found that the device with the narrowest mesa shows very poor short circuit (SC) withstand capability although it suppresses the conduction loss considerably. This poor SC capacity is caused by non-saturated output characteristics which are originated by collector bias induced barrier lowering in the middle of Si mesa. The current filamentation is observed in the 3D multi-cell short circuit simulation with self-heating and the SC capacity degradation due to the filamentation is enhanced in the narrower mesa structure.

AB - The very narrow mesa structures based on our 7th generation IGBT process are fabricated and it is found that the device with the narrowest mesa shows very poor short circuit (SC) withstand capability although it suppresses the conduction loss considerably. This poor SC capacity is caused by non-saturated output characteristics which are originated by collector bias induced barrier lowering in the middle of Si mesa. The current filamentation is observed in the 3D multi-cell short circuit simulation with self-heating and the SC capacity degradation due to the filamentation is enhanced in the narrower mesa structure.

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On the scaling limit of the Si-IGBTs with very narrow mesa structure

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