Optical and structural studies in InGaN quantum well structure laser diodes

Shigefusa F. Chichibu*, Takashi Azuhata, Mutsumi Sugiyama, Toshio Kitamura, Yuuki Ishida, Hajime Okumura, Hisayuki Nakanishi, Takayuki Sota, Takashi Mukai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

74 Citations (Scopus)


An In0.06Ga0.94N multiple-quantum-well (MQW) laser diode (LD) structure was shown to have atomically flat interfaces and very small compositional inhomogeneity. However, excitons were confirmed to be localized at the exponential-tail type potential minima in the density of states. Spontaneous emission was assigned as being due to the recombination of localized excitons while the stimulated emission seemed to come from the continuum states energetically higher than the mobility edge.

Original languageEnglish
Pages (from-to)2177-2183
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 2001 Nov

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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