Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane

Keisuke Ishii; Yoshimichi Ohki; Hiroyuki Nishikawa

doi:10.1063/1.357196

Optical characteristics of SiO₂ formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane

Keisuke Ishii^*, Yoshimichi Ohki, Hiroyuki Nishikawa

^*Corresponding author for this work

Kagami Memorial Research Institute for Materials Science and Technology

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Optical characteristics of thin SiO₂ films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.

Original language	English
Pages (from-to)	5418-5422
Number of pages	5
Journal	Journal of Applied Physics
Volume	76
Issue number	9
DOIs	https://doi.org/10.1063/1.357196
Publication status	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.357196

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abstract = "Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.",

author = "Keisuke Ishii and Yoshimichi Ohki and Hiroyuki Nishikawa",

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journal = "Journal of Applied Physics",

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AU - Ishii, Keisuke

AU - Ohki, Yoshimichi

AU - Nishikawa, Hiroyuki

PY - 1994

Y1 - 1994

N2 - Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.

AB - Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.

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Optical characteristics of SiO₂ formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane

Abstract

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