Optical investigation of GaAs growth process in flow-rate modulation epitaxy

Naoki Kobayashi; Toshiki Makimoto; Yoshiharu Yamauchi; Yoshiji Horikoshi

doi:10.7567/ssdm.1990.s-d-2

Optical investigation of GaAs growth process in flow-rate modulation epitaxy

Naoki Kobayashi^*, Toshiki Makimoto, Yoshiharu Yamauchi, Yoshiji Horikoshi

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of P-polarized light incident at the Brewster angle. This configuration minimizes bulk GaAs contribution to the total light reflection. The small change in reflected light intensity between Ga and As atomic surfaces during flow-rate Modulation Epitaxy (FME) of GaAs is thus detected with a high signal-to-noise ratio. By using this characteristic, GaAs growth rate can be monitored in-situ on an atomic scale. In addition to the in-situ monitoring of growth rate, the decomposition process of Ga and As precursors can be studied by SPA. We demonstrate the investigation of decomposition process of Ga organometals, and discuss the growth mechanisms of FME and atomic layer epitaxy.

Original language	English
Pages	881-884
Number of pages	4
DOIs	https://doi.org/10.7567/ssdm.1990.s-d-2
Publication status	Published - 1990
Externally published	Yes
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 1990 Aug 22 → 1990 Aug 24

Other

Other	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	90/8/22 → 90/8/24

ASJC Scopus subject areas

Engineering(all)

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10.7567/ssdm.1990.s-d-2

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title = "Optical investigation of GaAs growth process in flow-rate modulation epitaxy",

abstract = "Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of P-polarized light incident at the Brewster angle. This configuration minimizes bulk GaAs contribution to the total light reflection. The small change in reflected light intensity between Ga and As atomic surfaces during flow-rate Modulation Epitaxy (FME) of GaAs is thus detected with a high signal-to-noise ratio. By using this characteristic, GaAs growth rate can be monitored in-situ on an atomic scale. In addition to the in-situ monitoring of growth rate, the decomposition process of Ga and As precursors can be studied by SPA. We demonstrate the investigation of decomposition process of Ga organometals, and discuss the growth mechanisms of FME and atomic layer epitaxy.",

author = "Naoki Kobayashi and Toshiki Makimoto and Yoshiharu Yamauchi and Yoshiji Horikoshi",

year = "1990",

doi = "10.7567/ssdm.1990.s-d-2",

language = "English",

pages = "881--884",

note = "22nd International Conference on Solid State Devices and Materials ; Conference date: 22-08-1990 Through 24-08-1990",

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T1 - Optical investigation of GaAs growth process in flow-rate modulation epitaxy

AU - Kobayashi, Naoki

AU - Makimoto, Toshiki

AU - Yamauchi, Yoshiharu

AU - Horikoshi, Yoshiji

PY - 1990

Y1 - 1990

N2 - Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of P-polarized light incident at the Brewster angle. This configuration minimizes bulk GaAs contribution to the total light reflection. The small change in reflected light intensity between Ga and As atomic surfaces during flow-rate Modulation Epitaxy (FME) of GaAs is thus detected with a high signal-to-noise ratio. By using this characteristic, GaAs growth rate can be monitored in-situ on an atomic scale. In addition to the in-situ monitoring of growth rate, the decomposition process of Ga and As precursors can be studied by SPA. We demonstrate the investigation of decomposition process of Ga organometals, and discuss the growth mechanisms of FME and atomic layer epitaxy.

AB - Surface photo-absorption (SPA) is a newly developed in-situ optical monitoring technique for the epitaxial growth process. This method is based on the reflectivity measurement of P-polarized light incident at the Brewster angle. This configuration minimizes bulk GaAs contribution to the total light reflection. The small change in reflected light intensity between Ga and As atomic surfaces during flow-rate Modulation Epitaxy (FME) of GaAs is thus detected with a high signal-to-noise ratio. By using this characteristic, GaAs growth rate can be monitored in-situ on an atomic scale. In addition to the in-situ monitoring of growth rate, the decomposition process of Ga and As precursors can be studied by SPA. We demonstrate the investigation of decomposition process of Ga organometals, and discuss the growth mechanisms of FME and atomic layer epitaxy.

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DO - 10.7567/ssdm.1990.s-d-2

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T2 - 22nd International Conference on Solid State Devices and Materials

Y2 - 22 August 1990 through 24 August 1990

ER -

Optical investigation of GaAs growth process in flow-rate modulation epitaxy

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