Abstract
Two types of optoelectronic switching devices using negative differential resistance (NDR) are proposed. One is a triangular-barrier optoelectronic switch which consists of a triangular-barrier phototransistor (TBP). The other is a resonant-tunneling triangular barrier optoelectronic switch (R-TOPS) which consists of a double-barrier resonant-tunneling diode and a TBP. Optically controlled S- and N-shaped NDRs in the structure of an R-TOPS are reported.
| Original language | English |
|---|---|
| Pages (from-to) | 524-527 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publication status | Published - 1995 Jan 1 |
| Externally published | Yes |
| Event | Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn Duration: 1995 May 9 → 1995 May 13 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering