Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

H. Sakata; K. Utaka; Y. Matsushima

doi:10.1007/BF00943629

Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

H. Sakata^*, K. Utaka, Y. Matsushima

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.

Original language	English
Pages (from-to)	591-597
Number of pages	7
Journal	Optical and Quantum Electronics
Volume	28
Issue number	5
DOIs	https://doi.org/10.1007/BF00943629
Publication status	Published - 1996 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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abstract = "We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.",

author = "H. Sakata and K. Utaka and Y. Matsushima",

year = "1996",

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AU - Sakata, H.

AU - Utaka, K.

AU - Matsushima, Y.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.

AB - We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.

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ER -

Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

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