Optimum design of gate/N- overlapped LDD transistor

M. Inuishi; K. Mitsui; S. Komori; M. Shimizu; H. Oda; J. Mitsuhashi; K. Tsukamoto

Optimum design of gate/N^- overlapped LDD transistor

M. Inuishi^*, K. Mitsui, S. Komori, M. Shimizu, H. Oda, J. Mitsuhashi, K. Tsukamoto

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

The authors present the optimum design and fabrication of the overlapped LDD (lightly doped drain) NMOS transistor. They use simulation to clarify the internal state of the overlapped LDD transistor under operation, evaluate the improved electrical characteristics of devices fabricated by rotational oblique N^- implantation, and show that the optimum design overlapped LDD can surpass the conventional LDD in device characteristics and circuit speed. They also show that oblique implantation is a promising method for forming the gate/N^- overlapped structures due to the simple control of the N^- region in terms of implantation angle and energy.

Original language	English
Pages (from-to)	33-34
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1989 Dec 1
Externally published	Yes
Event	Ninth Symposium on VLSI Technology 1989 - Digest of Technical Papers - Kyoto, Jpn Duration: 1989 May 22 → 1989 May 25

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@article{c17a7bc96e404aaba294cc45dc31f023,

title = "Optimum design of gate/N- overlapped LDD transistor",

abstract = "The authors present the optimum design and fabrication of the overlapped LDD (lightly doped drain) NMOS transistor. They use simulation to clarify the internal state of the overlapped LDD transistor under operation, evaluate the improved electrical characteristics of devices fabricated by rotational oblique N- implantation, and show that the optimum design overlapped LDD can surpass the conventional LDD in device characteristics and circuit speed. They also show that oblique implantation is a promising method for forming the gate/N- overlapped structures due to the simple control of the N- region in terms of implantation angle and energy.",

author = "M. Inuishi and K. Mitsui and S. Komori and M. Shimizu and H. Oda and J. Mitsuhashi and K. Tsukamoto",

year = "1989",

month = dec,

day = "1",

language = "English",

pages = "33--34",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Ninth Symposium on VLSI Technology 1989 - Digest of Technical Papers ; Conference date: 22-05-1989 Through 25-05-1989",

}

TY - JOUR

T1 - Optimum design of gate/N- overlapped LDD transistor

AU - Inuishi, M.

AU - Mitsui, K.

AU - Komori, S.

AU - Shimizu, M.

AU - Oda, H.

AU - Mitsuhashi, J.

AU - Tsukamoto, K.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - The authors present the optimum design and fabrication of the overlapped LDD (lightly doped drain) NMOS transistor. They use simulation to clarify the internal state of the overlapped LDD transistor under operation, evaluate the improved electrical characteristics of devices fabricated by rotational oblique N- implantation, and show that the optimum design overlapped LDD can surpass the conventional LDD in device characteristics and circuit speed. They also show that oblique implantation is a promising method for forming the gate/N- overlapped structures due to the simple control of the N- region in terms of implantation angle and energy.

AB - The authors present the optimum design and fabrication of the overlapped LDD (lightly doped drain) NMOS transistor. They use simulation to clarify the internal state of the overlapped LDD transistor under operation, evaluate the improved electrical characteristics of devices fabricated by rotational oblique N- implantation, and show that the optimum design overlapped LDD can surpass the conventional LDD in device characteristics and circuit speed. They also show that oblique implantation is a promising method for forming the gate/N- overlapped structures due to the simple control of the N- region in terms of implantation angle and energy.

UR - http://www.scopus.com/inward/record.url?scp=0024901452&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024901452&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0024901452

SN - 0743-1562

SP - 33

EP - 34

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - Ninth Symposium on VLSI Technology 1989 - Digest of Technical Papers

Y2 - 22 May 1989 through 25 May 1989

ER -

Optimum design of gate/N^- overlapped LDD transistor

Abstract

ASJC Scopus subject areas

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