TY - JOUR
T1 - Optoelectronic memory characteristics by symmetric triangular-barrier optoelectronic switch (S-TOPS)
AU - Sakata, H.
AU - Nagao, Y.
AU - Matsushima, Yuichi
PY - 1999/7
Y1 - 1999/7
N2 - Novel optoelectronic memory characteristics are successfully demonstrated by a symmetric triangular-barrier optoelectronic switch (S-TOPS), which consists of InGaAs. We confirm that stored data can be held for about 10 min without applied voltage. We can apply this device to an image memory or image processor in a two-dimensional form, which consumes very low holding energy.
AB - Novel optoelectronic memory characteristics are successfully demonstrated by a symmetric triangular-barrier optoelectronic switch (S-TOPS), which consists of InGaAs. We confirm that stored data can be held for about 10 min without applied voltage. We can apply this device to an image memory or image processor in a two-dimensional form, which consumes very low holding energy.
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U2 - 10.1088/1464-4258/1/4/302
DO - 10.1088/1464-4258/1/4/302
M3 - Article
AN - SCOPUS:0033316486
SN - 1464-4258
VL - 1
SP - 435
EP - 437
JO - Journal of Optics A: Pure and Applied Optics
JF - Journal of Optics A: Pure and Applied Optics
IS - 4
ER -