Organic field-effect transistor based on a thin film of polydiacetylene prepared from 10,12-pentacosadiynoic acid

Tomohiro Koyanagi; Masanori Muratsubaki; Yoshinobu Hosoi; Takanori Shibata; Ken Tsutsui; Yasuo Wada; Yukio Furukawa

doi:10.1246/cl.2006.20

Organic field-effect transistor based on a thin film of polydiacetylene prepared from 10,12-pentacosadiynoic acid

Tomohiro Koyanagi, Masanori Muratsubaki, Yoshinobu Hosoi, Takanori Shibata, Ken Tsutsui, Yasuo Wada, Yukio Furukawa

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

The organic field-effect transistors based on polydiacetylene as an active semiconductor have been made. The hole mobility and the on/off ratio have been determined to be 1.3 × 10^-3 cm²/V s and 1.0 × 10⁴, respectively, for the transistor based on the blue phase of polydiacetylene prepared from 10,12-pentacosadiynoic acid. The gate-voltage-induced infrared absorption spectrum has been attributed to the positive carriers injected by field effect. The spectrum shows a remarkable electron-molecular vibration coupling between vibration levels and an electronic transition.

Original language	English
Pages (from-to)	20-21
Number of pages	2
Journal	Chemistry Letters
Volume	35
Issue number	1
DOIs	https://doi.org/10.1246/cl.2006.20
Publication status	Published - 2006 Jan 5
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)

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abstract = "The organic field-effect transistors based on polydiacetylene as an active semiconductor have been made. The hole mobility and the on/off ratio have been determined to be 1.3 × 10-3 cm2/V s and 1.0 × 104, respectively, for the transistor based on the blue phase of polydiacetylene prepared from 10,12-pentacosadiynoic acid. The gate-voltage-induced infrared absorption spectrum has been attributed to the positive carriers injected by field effect. The spectrum shows a remarkable electron-molecular vibration coupling between vibration levels and an electronic transition.",

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AU - Koyanagi, Tomohiro

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AU - Hosoi, Yoshinobu

AU - Shibata, Takanori

AU - Tsutsui, Ken

AU - Wada, Yasuo

AU - Furukawa, Yukio

PY - 2006/1/5

Y1 - 2006/1/5

N2 - The organic field-effect transistors based on polydiacetylene as an active semiconductor have been made. The hole mobility and the on/off ratio have been determined to be 1.3 × 10-3 cm2/V s and 1.0 × 104, respectively, for the transistor based on the blue phase of polydiacetylene prepared from 10,12-pentacosadiynoic acid. The gate-voltage-induced infrared absorption spectrum has been attributed to the positive carriers injected by field effect. The spectrum shows a remarkable electron-molecular vibration coupling between vibration levels and an electronic transition.

AB - The organic field-effect transistors based on polydiacetylene as an active semiconductor have been made. The hole mobility and the on/off ratio have been determined to be 1.3 × 10-3 cm2/V s and 1.0 × 104, respectively, for the transistor based on the blue phase of polydiacetylene prepared from 10,12-pentacosadiynoic acid. The gate-voltage-induced infrared absorption spectrum has been attributed to the positive carriers injected by field effect. The spectrum shows a remarkable electron-molecular vibration coupling between vibration levels and an electronic transition.

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Organic field-effect transistor based on a thin film of polydiacetylene prepared from 10,12-pentacosadiynoic acid

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