Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu*, Akira Uedono, Takeyoshi Onuma, Benjamin A. Haskell, Arpan Chakraborty, Takahiro Koyama, Paul T. Fini, Stacia Keller, Steven P. Denbaars, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Shigeo Yamaguchi, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Jung Han, Takayuki Sota

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

652 Citations (Scopus)


GaN and relate (Al, In, Ga)N alloys can produce blue- and green-light-emitting-diodes (LEDs) for full color displays and signals although they contain a high density of structural defects such as threading dislocations (TDs) and stacking faults. Both Quantum Wells (QW) and three-dimensional (3D) bulk films of InGaN exhibit high emission efficiency due to the recombination of excitons localized at certain potential minima originating from InN-rich lower bandgap regions. Hole function localization was predicted to be centered around In atoms in dilute cubic InGaN, using large-scale atomistic empirical pseudopotential calculations. Defect-insensitive nature of NBE emission probability in bulk films of In-containing InGaN, AlInN and AlInGaN was explained. The use of atomically inhomogeneous crystals alloyed or doped with exotic atoms for future innovations in efficient light emitters even when using defective crystals was proposed was proposed.

Original languageEnglish
Pages (from-to)810-816
Number of pages7
JournalNature Materials
Issue number10
Publication statusPublished - 2006 Oct 5

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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