Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride

Takashi Noma; Kwang Soo Seol; Hiromitsu Kato; Makoto Fujimaki; Yoshimichi Ohki

doi:10.1063/1.1405806

Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride

Takashi Noma^*, Kwang Soo Seol, Hiromitsu Kato, Makoto Fujimaki, Yoshimichi Ohki

^*Corresponding author for this work

Kagami Memorial Research Institute for Materials Science and Technology

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

A broad photoluminescence (PL) around 2.6-2.9 eV is known to appear in hydrogenated silicon oxynitride. Although its origin was reported to be Si-N bonds, it is not so clear since the material contains hydrogen. In the present research, we have confirmed that the same PL appears in silicon oxynitride grown by nitriding of silicon dioxide. The depth profile of the PL intensity agrees with that of the nitrogen concentration. Furthermore, the emission spectrum, excitation spectrum, and decay constant of this PL agree with those of the PL observed in silicon nitride. Based on these results and theoretical discussion, the origin of the 2.6-2.9 eV PL is estimated to be Si-N bonds.

Original language	English
Pages (from-to)	1995-1997
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	13
DOIs	https://doi.org/10.1063/1.1405806
Publication status	Published - 2001 Sept 24

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1405806

Cite this

@article{4556e0e9555a45c9885f8cbaf5ff0140,

title = "Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride",

abstract = "A broad photoluminescence (PL) around 2.6-2.9 eV is known to appear in hydrogenated silicon oxynitride. Although its origin was reported to be Si-N bonds, it is not so clear since the material contains hydrogen. In the present research, we have confirmed that the same PL appears in silicon oxynitride grown by nitriding of silicon dioxide. The depth profile of the PL intensity agrees with that of the nitrogen concentration. Furthermore, the emission spectrum, excitation spectrum, and decay constant of this PL agree with those of the PL observed in silicon nitride. Based on these results and theoretical discussion, the origin of the 2.6-2.9 eV PL is estimated to be Si-N bonds.",

author = "Takashi Noma and Seol, {Kwang Soo} and Hiromitsu Kato and Makoto Fujimaki and Yoshimichi Ohki",

year = "2001",

month = sep,

day = "24",

doi = "10.1063/1.1405806",

language = "English",

volume = "79",

pages = "1995--1997",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride

AU - Noma, Takashi

AU - Seol, Kwang Soo

AU - Kato, Hiromitsu

AU - Fujimaki, Makoto

AU - Ohki, Yoshimichi

PY - 2001/9/24

Y1 - 2001/9/24

N2 - A broad photoluminescence (PL) around 2.6-2.9 eV is known to appear in hydrogenated silicon oxynitride. Although its origin was reported to be Si-N bonds, it is not so clear since the material contains hydrogen. In the present research, we have confirmed that the same PL appears in silicon oxynitride grown by nitriding of silicon dioxide. The depth profile of the PL intensity agrees with that of the nitrogen concentration. Furthermore, the emission spectrum, excitation spectrum, and decay constant of this PL agree with those of the PL observed in silicon nitride. Based on these results and theoretical discussion, the origin of the 2.6-2.9 eV PL is estimated to be Si-N bonds.

AB - A broad photoluminescence (PL) around 2.6-2.9 eV is known to appear in hydrogenated silicon oxynitride. Although its origin was reported to be Si-N bonds, it is not so clear since the material contains hydrogen. In the present research, we have confirmed that the same PL appears in silicon oxynitride grown by nitriding of silicon dioxide. The depth profile of the PL intensity agrees with that of the nitrogen concentration. Furthermore, the emission spectrum, excitation spectrum, and decay constant of this PL agree with those of the PL observed in silicon nitride. Based on these results and theoretical discussion, the origin of the 2.6-2.9 eV PL is estimated to be Si-N bonds.

UR - http://www.scopus.com/inward/record.url?scp=0035943911&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035943911&partnerID=8YFLogxK

U2 - 10.1063/1.1405806

DO - 10.1063/1.1405806

M3 - Article

AN - SCOPUS:0035943911

SN - 0003-6951

VL - 79

SP - 1995

EP - 1997

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this