Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride

Takashi Noma*, Kwang Soo Seol, Hiromitsu Kato, Makoto Fujimaki, Yoshimichi Ohki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


A broad photoluminescence (PL) around 2.6-2.9 eV is known to appear in hydrogenated silicon oxynitride. Although its origin was reported to be Si-N bonds, it is not so clear since the material contains hydrogen. In the present research, we have confirmed that the same PL appears in silicon oxynitride grown by nitriding of silicon dioxide. The depth profile of the PL intensity agrees with that of the nitrogen concentration. Furthermore, the emission spectrum, excitation spectrum, and decay constant of this PL agree with those of the PL observed in silicon nitride. Based on these results and theoretical discussion, the origin of the 2.6-2.9 eV PL is estimated to be Si-N bonds.

Original languageEnglish
Pages (from-to)1995-1997
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2001 Sept 24

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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