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Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain
Ken Kudara*, Masakazu Arai, Yukiko Suzuki, Aoi Morishita, Jun Tsunoda, Atsushi Hiraiwa, Hiroshi Kawarada
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
13
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(Scopus)