Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET

Masayuki Iwataki; Nobutaka Oi; Kiyotaka Horikawa; Shotaro Amano; Jun Nishimura; Taisuke Kageura; Masafumi Inaba; Atsushi Hiraiwa; Hiroshi Kawarada

doi:10.1109/LED.2019.2953693

Over 12000 A/cm² and 3.2 mΩcm² Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET

Masayuki Iwataki^*, Nobutaka Oi, Kiyotaka Horikawa, Shotaro Amano, Jun Nishimura, Taisuke Kageura, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We present a miniaturized vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2μm-wide trench and disposed a part of the gate electrode to overlap the Al₂O₃ insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of I_D =12800 A/cm² at V_DS =-50 V and the specific on-resistance of R_ON =3.2 m}Ω cm² at V_DS =-10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.

Original language	English
Article number	8902031
Pages (from-to)	111-114
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	1
DOIs	https://doi.org/10.1109/LED.2019.2953693
Publication status	Published - 2020 Jan

Keywords

Diamond
MOSFET
vertical-type device

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2019.2953693

Cite this

@article{a7517c66733e440ba36ce9869d00f73e,

title = "Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET",

abstract = "We present a miniaturized vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2μm-wide trench and disposed a part of the gate electrode to overlap the Al2O3 insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of ID =12800 A/cm2 at VDS =-50 V and the specific on-resistance of RON =3.2 m}Ω cm2 at VDS =-10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.",

keywords = "Diamond, MOSFET, vertical-type device",

author = "Masayuki Iwataki and Nobutaka Oi and Kiyotaka Horikawa and Shotaro Amano and Jun Nishimura and Taisuke Kageura and Masafumi Inaba and Atsushi Hiraiwa and Hiroshi Kawarada",

note = "Funding Information: Manuscript received October 21, 2019; revised November 11, 2019; accepted November 11, 2019. Date of publication November 15, 2019; date of current version December 27, 2019. This work was supported in part by the JSPS Grant-in-Aid for Scientific Research (S) under Grant JP26220903 and in part by the Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development. The review of this letter was arranged by Editor G. Han. (Corresponding author: Masayuki Iwataki.) M. Iwataki, N. Oi, K. Horikawa, S. Amano, J. Nishimura, T. Kageura, and M. Inaba are with the Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan. Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2020",

month = jan,

doi = "10.1109/LED.2019.2953693",

language = "English",

volume = "41",

pages = "111--114",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET

AU - Iwataki, Masayuki

AU - Oi, Nobutaka

AU - Horikawa, Kiyotaka

AU - Amano, Shotaro

AU - Nishimura, Jun

AU - Kageura, Taisuke

AU - Inaba, Masafumi

AU - Hiraiwa, Atsushi

AU - Kawarada, Hiroshi

N1 - Funding Information: Manuscript received October 21, 2019; revised November 11, 2019; accepted November 11, 2019. Date of publication November 15, 2019; date of current version December 27, 2019. This work was supported in part by the JSPS Grant-in-Aid for Scientific Research (S) under Grant JP26220903 and in part by the Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development. The review of this letter was arranged by Editor G. Han. (Corresponding author: Masayuki Iwataki.) M. Iwataki, N. Oi, K. Horikawa, S. Amano, J. Nishimura, T. Kageura, and M. Inaba are with the Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan. Publisher Copyright: © 2019 IEEE.

PY - 2020/1

Y1 - 2020/1

N2 - We present a miniaturized vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2μm-wide trench and disposed a part of the gate electrode to overlap the Al2O3 insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of ID =12800 A/cm2 at VDS =-50 V and the specific on-resistance of RON =3.2 m}Ω cm2 at VDS =-10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.

AB - We present a miniaturized vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2μm-wide trench and disposed a part of the gate electrode to overlap the Al2O3 insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of ID =12800 A/cm2 at VDS =-50 V and the specific on-resistance of RON =3.2 m}Ω cm2 at VDS =-10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.

KW - Diamond

KW - MOSFET

KW - vertical-type device

UR - http://www.scopus.com/inward/record.url?scp=85077811705&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85077811705&partnerID=8YFLogxK

U2 - 10.1109/LED.2019.2953693

DO - 10.1109/LED.2019.2953693

M3 - Article

AN - SCOPUS:85077811705

SN - 0741-3106

VL - 41

SP - 111

EP - 114

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

M1 - 8902031

ER -