Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs

Hiroki Matsudaira*, Shingo Miyamoto, Hiroaki Ishizaka, Hitoshi Umezawa, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

59 Citations (Scopus)


Submicrometer-gate (0.2-0.5-μm) diamond metal-insulator-semiconductor field-effect transistors (MIS-FETs) were fabricated on an H-terminated diamond surface. The maximum transconductance in dc mode reaches 165 mS/mm, while the average transconductance is 70 mS/mm in submicrometer-gate diamond MISFETs. The highest cutoff frequency of 23 GHz and the maximum frequency of oscillation of 25 GHz are realized in the 0.2-μm-gate diamond MISFET. From the intrinsic transconductances or the cutoff frequencies, the saturation velocities are estimated to be 4 × 106 cm/s in the submicrometer-gate FETs. They are reduced by gate-drain capacitance and source resistance.

Original languageEnglish
Pages (from-to)480-482
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - 2004 Jul

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs'. Together they form a unique fingerprint.

Cite this